Investigators from Kyung Hee University Have Reported New Data on Semiconductor Processing (Impact of Channel Thickness On Device Scaling In Vertical Ingazno Channel Charge-trap Memory Transistors With Ald Al 2 O 3 Tunneling Layer)

Media coverage

• Title	Investigators from Kyung Hee University Have Reported New Data on Semiconductor Processing (Impact of Channel Thickness On Device Scaling In Vertical Ingazno Channel Charge-trap Memory Transistors With Ald Al 2 O 3 Tunneling Layer)
  Media name/outlet	South Korea Daily Report
  Country/Territory	United States
  Date	7/08/24
  Persons	Sung-Min Yoon