Material Science
Film
100%
Thin Films
47%
Titanium Dioxide
37%
Oxygen Vacancy
35%
ZnO
33%
Ferroelectric Material
33%
Resistive Random-Access Memory
23%
Density
22%
Ferroelectricity
21%
Zinc Oxide
16%
Field Effect Transistor
15%
Oxide Compound
14%
Monolayers
14%
X-Ray Diffraction
14%
Oxide Film
13%
Doping (Additives)
12%
Nanoparticle
12%
Neuromorphic Computing
11%
Thin-Film Transistor
11%
Lanthanum
10%
Lead Zirconate Titanate
10%
Transition Metal Oxide
9%
Electronic Circuit
9%
Annealing
9%
Energy Levels
9%
X-Ray Photoelectron Spectroscopy
8%
Multilayer Film
8%
Buffer Layer
8%
Piezoelectricity
8%
Metal Deposition
8%
Photoemission Spectroscopy
8%
Dielectric Material
7%
Permittivity
7%
Transistor
7%
Ferroelectric Thin Films
6%
Switch
6%
Oxidation Reaction
6%
Grain Size
6%
Titanium Oxide
6%
Schottky Barrier
5%
Grain Boundaries
5%
Spin Coating
5%
Capacitor
5%
Indium Tin Oxide
5%
Dielectric Property
5%
Current-Voltage Characteristic
5%
Engineering
Resistive
92%
Atomic Layer Deposition
37%
Thin Films
22%
Resistive Random Access Memory
14%
Oxygen Vacancy
14%
Oxide Film
13%
Low-Temperature
12%
Ray Diffraction
10%
Array Architecture
10%
Nonvolatile Memory
10%
Dopants
10%
Artificial Neural Network
9%
Ray Photoelectron Spectroscopy
9%
Deposition Process
8%
Piezoelectric
8%
Titanate
8%
Valence Band
7%
High Resistance State
7%
Reactant
7%
Silicon Dioxide
7%
Carrier Concentration
6%
Lead Zirconate
6%
Passivation
6%
Oxygen Ion
6%
Reliability Availability and Maintainability (Reliability Engineering)
5%
Thin-Film Transistor
5%
Transducer
5%
Dielectrics
5%
Substituent
5%
Oxygen Content
5%
Deep Neural Network
5%
Promising Candidate
5%
