12.1: Invited paper: Enhanced electron emission of carbon-nanotube emitters with post-growth treatment

Joon Won Lim; Je Hwang Ryu; Han Eol Lim; Byoung Taek Son; Soon Ju Jang; Yi Sang Lee; Jin Jang; Kyu Chang Park

doi:10.1889/1.3256541

12.1: Invited paper: Enhanced electron emission of carbon-nanotube emitters with post-growth treatment

Joon Won Lim, Je Hwang Ryu, Han Eol Lim, Byoung Taek Son, Soon Ju Jang, Yi Sang Lee, Jin Jang, Kyu Chang Park

Research output: Contribution to journal › Conference article › peer-review

Abstract

We used a resist-assisted patterning (RAP) process for the growth of CNTs as electron emitters. The electron emission sites were easily controlled by simple resist patterning process. To obtain stabilized and enhanced electron emission, post growth treatment process was adopted. The electron emission current strongly depended on the post growth treatment conditions. The electron emission current was increased with increasing acid treatment time up to 20 second. The enhanced electron emission current was more enhanced with consecutive post growth temperature and acid treatment. After 20 sec post growth treatment on robust CNTs, we can obtain 1.62 mA/cm² current density at 4 V/μm field. The controlled electron emission current of CNT emitter array with RAP process and structural improvement of CNT-FEAs after HF treatment for enhanced electron emission was discussed.

Original language	English
Pages (from-to)	131-134
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	40
Issue number	1
DOIs	https://doi.org/10.1889/1.3256541
Publication status	Published - 2009
Event	2009 Vehicles and Photons Symposium - Dearborn, MI, United States Duration: 15 Oct 2009 → 16 Oct 2009

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© 2009 SID.

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title = "12.1: Invited paper: Enhanced electron emission of carbon-nanotube emitters with post-growth treatment",

abstract = "We used a resist-assisted patterning (RAP) process for the growth of CNTs as electron emitters. The electron emission sites were easily controlled by simple resist patterning process. To obtain stabilized and enhanced electron emission, post growth treatment process was adopted. The electron emission current strongly depended on the post growth treatment conditions. The electron emission current was increased with increasing acid treatment time up to 20 second. The enhanced electron emission current was more enhanced with consecutive post growth temperature and acid treatment. After 20 sec post growth treatment on robust CNTs, we can obtain 1.62 mA/cm2 current density at 4 V/μm field. The controlled electron emission current of CNT emitter array with RAP process and structural improvement of CNT-FEAs after HF treatment for enhanced electron emission was discussed.",

author = "Lim, {Joon Won} and Ryu, {Je Hwang} and Lim, {Han Eol} and Son, {Byoung Taek} and Jang, {Soon Ju} and Lee, {Yi Sang} and Jin Jang and Park, {Kyu Chang}",

note = "Publisher Copyright: {\textcopyright} 2009 SID.; 2009 Vehicles and Photons Symposium ; Conference date: 15-10-2009 Through 16-10-2009",

year = "2009",

doi = "10.1889/1.3256541",

language = "English",

volume = "40",

pages = "131--134",

journal = "Digest of Technical Papers - SID International Symposium",

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TY - JOUR

T1 - 12.1

T2 - 2009 Vehicles and Photons Symposium

AU - Lim, Joon Won

AU - Ryu, Je Hwang

AU - Lim, Han Eol

AU - Son, Byoung Taek

AU - Jang, Soon Ju

AU - Lee, Yi Sang

AU - Jang, Jin

AU - Park, Kyu Chang

PY - 2009

Y1 - 2009

N2 - We used a resist-assisted patterning (RAP) process for the growth of CNTs as electron emitters. The electron emission sites were easily controlled by simple resist patterning process. To obtain stabilized and enhanced electron emission, post growth treatment process was adopted. The electron emission current strongly depended on the post growth treatment conditions. The electron emission current was increased with increasing acid treatment time up to 20 second. The enhanced electron emission current was more enhanced with consecutive post growth temperature and acid treatment. After 20 sec post growth treatment on robust CNTs, we can obtain 1.62 mA/cm2 current density at 4 V/μm field. The controlled electron emission current of CNT emitter array with RAP process and structural improvement of CNT-FEAs after HF treatment for enhanced electron emission was discussed.

AB - We used a resist-assisted patterning (RAP) process for the growth of CNTs as electron emitters. The electron emission sites were easily controlled by simple resist patterning process. To obtain stabilized and enhanced electron emission, post growth treatment process was adopted. The electron emission current strongly depended on the post growth treatment conditions. The electron emission current was increased with increasing acid treatment time up to 20 second. The enhanced electron emission current was more enhanced with consecutive post growth temperature and acid treatment. After 20 sec post growth treatment on robust CNTs, we can obtain 1.62 mA/cm2 current density at 4 V/μm field. The controlled electron emission current of CNT emitter array with RAP process and structural improvement of CNT-FEAs after HF treatment for enhanced electron emission was discussed.

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U2 - 10.1889/1.3256541

DO - 10.1889/1.3256541

M3 - Conference article

AN - SCOPUS:85072104364

SN - 0097-966X

VL - 40

SP - 131

EP - 134

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 1

Y2 - 15 October 2009 through 16 October 2009

ER -

12.1: Invited paper: Enhanced electron emission of carbon-nanotube emitters with post-growth treatment

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