1.54 μm emission mechanism in Er-doped silicon-rich silicon oxides

Y. R. Jang; K. H. Yoo; J. S. Ahn; C. Kim; S. M. Park

doi:10.1063/1.3226001

1.54 μm emission mechanism in Er-doped silicon-rich silicon oxides

Y. R. Jang, K. H. Yoo, J. S. Ahn, C. Kim, S. M. Park

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Abstract

Silicon-rich silicon oxide (SRSO) and Er-doped SRSO (SRSO:Er) thin films were formed by pulsed laser deposition, and characterized by photoluminescence (PL), x-ray photoelectron spectroscopy (XPS), x-ray diffraction (XRD), and UV-visible transmission in order to clarify the 1.54 μm emission mechanism in the SRSO:Er films. The oxygen content of the films was varied by the adjustment of oxygen partial pressure. The behavior of the 1.54 μm PL with oxygen partial pressure combined with XPS and XRD data show that the 1.54 μm emission intensity is related to the amount of SiOx phase. This conclusion is well supported by the measurements of UV-visible transmission. In many previous papers, the 1.54 μm emission is associated with Si nanocrystals, but in our study the correlation between 1.54 μm emission intensity and the amount of SiOx phase is much clearer.

Original language	English
Article number	063521
Journal	Journal of Applied Physics
Volume	106
Issue number	6
DOIs	https://doi.org/10.1063/1.3226001
Publication status	Published - 2009

Bibliographical note

Funding Information:
This work was supported by a grant from the Kyung Hee University Post-Doctoral Fellowship in 2009 (Grant No. KHU-20090507).

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10.1063/1.3226001

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title = "1.54 μm emission mechanism in Er-doped silicon-rich silicon oxides",

abstract = "Silicon-rich silicon oxide (SRSO) and Er-doped SRSO (SRSO:Er) thin films were formed by pulsed laser deposition, and characterized by photoluminescence (PL), x-ray photoelectron spectroscopy (XPS), x-ray diffraction (XRD), and UV-visible transmission in order to clarify the 1.54 μm emission mechanism in the SRSO:Er films. The oxygen content of the films was varied by the adjustment of oxygen partial pressure. The behavior of the 1.54 μm PL with oxygen partial pressure combined with XPS and XRD data show that the 1.54 μm emission intensity is related to the amount of SiOx phase. This conclusion is well supported by the measurements of UV-visible transmission. In many previous papers, the 1.54 μm emission is associated with Si nanocrystals, but in our study the correlation between 1.54 μm emission intensity and the amount of SiOx phase is much clearer.",

author = "Jang, {Y. R.} and Yoo, {K. H.} and Ahn, {J. S.} and C. Kim and Park, {S. M.}",

note = "Funding Information: This work was supported by a grant from the Kyung Hee University Post-Doctoral Fellowship in 2009 (Grant No. KHU-20090507).",

year = "2009",

doi = "10.1063/1.3226001",

language = "English",

volume = "106",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - 1.54 μm emission mechanism in Er-doped silicon-rich silicon oxides

AU - Jang, Y. R.

AU - Yoo, K. H.

AU - Ahn, J. S.

AU - Kim, C.

AU - Park, S. M.

N1 - Funding Information: This work was supported by a grant from the Kyung Hee University Post-Doctoral Fellowship in 2009 (Grant No. KHU-20090507).

PY - 2009

Y1 - 2009

N2 - Silicon-rich silicon oxide (SRSO) and Er-doped SRSO (SRSO:Er) thin films were formed by pulsed laser deposition, and characterized by photoluminescence (PL), x-ray photoelectron spectroscopy (XPS), x-ray diffraction (XRD), and UV-visible transmission in order to clarify the 1.54 μm emission mechanism in the SRSO:Er films. The oxygen content of the films was varied by the adjustment of oxygen partial pressure. The behavior of the 1.54 μm PL with oxygen partial pressure combined with XPS and XRD data show that the 1.54 μm emission intensity is related to the amount of SiOx phase. This conclusion is well supported by the measurements of UV-visible transmission. In many previous papers, the 1.54 μm emission is associated with Si nanocrystals, but in our study the correlation between 1.54 μm emission intensity and the amount of SiOx phase is much clearer.

AB - Silicon-rich silicon oxide (SRSO) and Er-doped SRSO (SRSO:Er) thin films were formed by pulsed laser deposition, and characterized by photoluminescence (PL), x-ray photoelectron spectroscopy (XPS), x-ray diffraction (XRD), and UV-visible transmission in order to clarify the 1.54 μm emission mechanism in the SRSO:Er films. The oxygen content of the films was varied by the adjustment of oxygen partial pressure. The behavior of the 1.54 μm PL with oxygen partial pressure combined with XPS and XRD data show that the 1.54 μm emission intensity is related to the amount of SiOx phase. This conclusion is well supported by the measurements of UV-visible transmission. In many previous papers, the 1.54 μm emission is associated with Si nanocrystals, but in our study the correlation between 1.54 μm emission intensity and the amount of SiOx phase is much clearer.

UR - http://www.scopus.com/inward/record.url?scp=70349646109&partnerID=8YFLogxK

U2 - 10.1063/1.3226001

DO - 10.1063/1.3226001

M3 - Article

AN - SCOPUS:70349646109

SN - 0021-8979

VL - 106

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

M1 - 063521

ER -

1.54 μm emission mechanism in Er-doped silicon-rich silicon oxides

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