2 inch AMOLED with a-Si:H TFT using PVP gate insulator on plastic substrate

Jeong Hyeon Ahn; Eun Young Lee; Sung Hwan Won; Seung Hoon Han; Sang Mi Cho; Jun Hee Kim; Tae Jin Park; Soon Kab Kwon; Yong Kyun Lee; Kyu Man Kim; Jin Jang

doi:10.1889/1.2036304

2 inch AMOLED with a-Si:H TFT using PVP gate insulator on plastic substrate

Jeong Hyeon Ahn, Eun Young Lee, Sung Hwan Won, Seung Hoon Han, Sang Mi Cho, Jun Hee Kim, Tae Jin Park, Soon Kab Kwon, Yong Kyun Lee, Kyu Man Kim, Jin Jang

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

We developed an 80 DPI, bottom emission AMOLED (2 inch) on transparent plastic (PES). Hydrogenated amorphous silicon (a-Si:H) on plastic using a PVP (Poly-4-vinylphenol) gate insulator was used for switching and driving TFTs. The low temperature process (<150°C) and the island formation of inorganic layers give a stress-free AMOLED backplane on PES. The a-Si:H TFT has a field-effect mobility of 0.5 cm²/Vs, a threshold voltage of 4.7 V and subthreshold slope 1.0 V/dec.

Original language	English
Article number	49.2
Pages (from-to)	1542-1545
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	36
Issue number	1
DOIs	https://doi.org/10.1889/1.2036304
Publication status	Published - 2005
Event	2005 SID International Symposium - Boston, MA, United States Duration: 25 May 2005 → 27 May 2005

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title = "2 inch AMOLED with a-Si:H TFT using PVP gate insulator on plastic substrate",

abstract = "We developed an 80 DPI, bottom emission AMOLED (2 inch) on transparent plastic (PES). Hydrogenated amorphous silicon (a-Si:H) on plastic using a PVP (Poly-4-vinylphenol) gate insulator was used for switching and driving TFTs. The low temperature process (<150°C) and the island formation of inorganic layers give a stress-free AMOLED backplane on PES. The a-Si:H TFT has a field-effect mobility of 0.5 cm2/Vs, a threshold voltage of 4.7 V and subthreshold slope 1.0 V/dec.",

author = "Ahn, {Jeong Hyeon} and Lee, {Eun Young} and Won, {Sung Hwan} and Han, {Seung Hoon} and Cho, {Sang Mi} and Kim, {Jun Hee} and Park, {Tae Jin} and Kwon, {Soon Kab} and Lee, {Yong Kyun} and Kim, {Kyu Man} and Jin Jang",

year = "2005",

doi = "10.1889/1.2036304",

language = "English",

volume = "36",

pages = "1542--1545",

journal = "Digest of Technical Papers - SID International Symposium",

issn = "0097-966X",

publisher = "John Wiley and Sons Inc.",

number = "1",

note = "2005 SID International Symposium ; Conference date: 25-05-2005 Through 27-05-2005",

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TY - JOUR

T1 - 2 inch AMOLED with a-Si:H TFT using PVP gate insulator on plastic substrate

AU - Ahn, Jeong Hyeon

AU - Lee, Eun Young

AU - Won, Sung Hwan

AU - Han, Seung Hoon

AU - Cho, Sang Mi

AU - Kim, Jun Hee

AU - Park, Tae Jin

AU - Kwon, Soon Kab

AU - Lee, Yong Kyun

AU - Kim, Kyu Man

AU - Jang, Jin

PY - 2005

Y1 - 2005

N2 - We developed an 80 DPI, bottom emission AMOLED (2 inch) on transparent plastic (PES). Hydrogenated amorphous silicon (a-Si:H) on plastic using a PVP (Poly-4-vinylphenol) gate insulator was used for switching and driving TFTs. The low temperature process (<150°C) and the island formation of inorganic layers give a stress-free AMOLED backplane on PES. The a-Si:H TFT has a field-effect mobility of 0.5 cm2/Vs, a threshold voltage of 4.7 V and subthreshold slope 1.0 V/dec.

AB - We developed an 80 DPI, bottom emission AMOLED (2 inch) on transparent plastic (PES). Hydrogenated amorphous silicon (a-Si:H) on plastic using a PVP (Poly-4-vinylphenol) gate insulator was used for switching and driving TFTs. The low temperature process (<150°C) and the island formation of inorganic layers give a stress-free AMOLED backplane on PES. The a-Si:H TFT has a field-effect mobility of 0.5 cm2/Vs, a threshold voltage of 4.7 V and subthreshold slope 1.0 V/dec.

UR - http://www.scopus.com/inward/record.url?scp=32344450472&partnerID=8YFLogxK

U2 - 10.1889/1.2036304

DO - 10.1889/1.2036304

M3 - Conference article

AN - SCOPUS:32344450472

SN - 0097-966X

VL - 36

SP - 1542

EP - 1545

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 1

M1 - 49.2

T2 - 2005 SID International Symposium

Y2 - 25 May 2005 through 27 May 2005

ER -

2 inch AMOLED with a-Si:H TFT using PVP gate insulator on plastic substrate

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