2 inch AMOLED with a-Si:H TFT using PVP gate insulator on plastic substrate

Jeong Hyeon Ahn; Eun Young Lee; Sung Hwan Won; Seung Hoon Han; Sang Mi Cho; Jun Hee Kim; Tae Jin Park; Soon Kab Kwon; Yong Kyun Lee; Kyu Man Kim; Jin Jang

doi:10.1889/1.2036304

2 inch AMOLED with a-Si:H TFT using PVP gate insulator on plastic substrate

Jeong Hyeon Ahn
, Eun Young Lee
, Sung Hwan Won
, Seung Hoon Han
, Sang Mi Cho
, Jun Hee Kim
, Tae Jin Park
, Soon Kab Kwon
, Yong Kyun Lee
, Kyu Man Kim
, Jin Jang

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

We developed an 80 DPI, bottom emission AMOLED (2 inch) on transparent plastic (PES). Hydrogenated amorphous silicon (a-Si:H) on plastic using a PVP (Poly-4-vinylphenol) gate insulator was used for switching and driving TFTs. The low temperature process (<150°C) and the island formation of inorganic layers give a stress-free AMOLED backplane on PES. The a-Si:H TFT has a field-effect mobility of 0.5 cm²/Vs, a threshold voltage of 4.7 V and subthreshold slope 1.0 V/dec.

Original language	English
Article number	49.2
Pages (from-to)	1542-1545
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	36
Issue number	1
DOIs	https://doi.org/10.1889/1.2036304
Publication status	Published - 2005
Event	2005 SID International Symposium - Boston, MA, United States Duration: 25 May 2005 → 27 May 2005

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@article{0582e1d05c4c4080b9a9a7e645f4f9f7,

title = "2 inch AMOLED with a-Si:H TFT using PVP gate insulator on plastic substrate",

abstract = "We developed an 80 DPI, bottom emission AMOLED (2 inch) on transparent plastic (PES). Hydrogenated amorphous silicon (a-Si:H) on plastic using a PVP (Poly-4-vinylphenol) gate insulator was used for switching and driving TFTs. The low temperature process (<150°C) and the island formation of inorganic layers give a stress-free AMOLED backplane on PES. The a-Si:H TFT has a field-effect mobility of 0.5 cm2/Vs, a threshold voltage of 4.7 V and subthreshold slope 1.0 V/dec.",

author = "Ahn, \{Jeong Hyeon\} and Lee, \{Eun Young\} and Won, \{Sung Hwan\} and Han, \{Seung Hoon\} and Cho, \{Sang Mi\} and Kim, \{Jun Hee\} and Park, \{Tae Jin\} and Kwon, \{Soon Kab\} and Lee, \{Yong Kyun\} and Kim, \{Kyu Man\} and Jin Jang",

year = "2005",

doi = "10.1889/1.2036304",

language = "English",

volume = "36",

pages = "1542--1545",

journal = "Digest of Technical Papers - SID International Symposium",

issn = "0097-966X",

publisher = "John Wiley and Sons Inc.",

number = "1",

note = "2005 SID International Symposium ; Conference date: 25-05-2005 Through 27-05-2005",

}

TY - JOUR

T1 - 2 inch AMOLED with a-Si:H TFT using PVP gate insulator on plastic substrate

AU - Ahn, Jeong Hyeon

AU - Lee, Eun Young

AU - Won, Sung Hwan

AU - Han, Seung Hoon

AU - Cho, Sang Mi

AU - Kim, Jun Hee

AU - Park, Tae Jin

AU - Kwon, Soon Kab

AU - Lee, Yong Kyun

AU - Kim, Kyu Man

AU - Jang, Jin

PY - 2005

Y1 - 2005

N2 - We developed an 80 DPI, bottom emission AMOLED (2 inch) on transparent plastic (PES). Hydrogenated amorphous silicon (a-Si:H) on plastic using a PVP (Poly-4-vinylphenol) gate insulator was used for switching and driving TFTs. The low temperature process (<150°C) and the island formation of inorganic layers give a stress-free AMOLED backplane on PES. The a-Si:H TFT has a field-effect mobility of 0.5 cm2/Vs, a threshold voltage of 4.7 V and subthreshold slope 1.0 V/dec.

AB - We developed an 80 DPI, bottom emission AMOLED (2 inch) on transparent plastic (PES). Hydrogenated amorphous silicon (a-Si:H) on plastic using a PVP (Poly-4-vinylphenol) gate insulator was used for switching and driving TFTs. The low temperature process (<150°C) and the island formation of inorganic layers give a stress-free AMOLED backplane on PES. The a-Si:H TFT has a field-effect mobility of 0.5 cm2/Vs, a threshold voltage of 4.7 V and subthreshold slope 1.0 V/dec.

UR - https://www.scopus.com/pages/publications/32344450472

U2 - 10.1889/1.2036304

DO - 10.1889/1.2036304

M3 - Conference article

AN - SCOPUS:32344450472

SN - 0097-966X

VL - 36

SP - 1542

EP - 1545

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 1

M1 - 49.2

T2 - 2005 SID International Symposium

Y2 - 25 May 2005 through 27 May 2005

ER -

2 inch AMOLED with a-Si:H TFT using PVP gate insulator on plastic substrate

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