Abstract
The integration of carbon nanotube (CNT) emitters with metal-oxide- semiconductor field-effect transistor (MOSFET) can stabilize and control the emission current of carbon nanotubes (CNTs). As the unit process, the CNTs were grown on the drain part of MOSFETs using the resist-assisted patterning (RAP) process. The electron emission current of CNTs grown on the drain was switched with a low voltage of the externally connected field-effect transistor and was uniform. The electron emission properties of CNT-emitters with the externally connected field-effect transistor were discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 307-310 |
| Number of pages | 4 |
| Journal | Digest of Technical Papers - SID International Symposium |
| Volume | 41 1 |
| DOIs | |
| Publication status | Published - May 2010 |
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