Abstract
We have fabricated a 120×160 high-resolution (200dpi) a-Si TFT active-matrix transparent phosphorescent OLED (PHOLED™) display with novel pixel architecture to maximize transparency and aperture ratio and also ensure comparable light emission from both sides of the display. The a-Si backplane was selected as the technology that would most easily enable the pathway toward achieving high-resolution flexible transparent AMOLEDs (T-AMOLEDs) on polymeric substrates. A-Si TFTs are preferred for fabrication on polymeric substrates since lower process temperatures can be used in comparison to poly-Si TFT processes. As a TOLED generally emits less light from a transparent cathode than anode, a standard 2T pixel was designed with both an opaque, reflective anode region on top of the TFTs as well as a conventional transparent ITO anode to equal the emission from both contacts. This design achieves a total pixel aperture ratio of 64% with a display transparency of 23% in the off-state.
| Original language | English |
|---|---|
| Article number | 49.3 |
| Pages (from-to) | 1546-1549 |
| Number of pages | 4 |
| Journal | Digest of Technical Papers - SID International Symposium |
| Volume | 36 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2005 |
| Event | 2005 SID International Symposium - Boston, MA, United States Duration: 25 May 2005 → 27 May 2005 |