A 28mn FD-SOI 4KB Radiation-hardened 12T SRAM Macro with 0.6 ∼ 1V Wide Dynamic Voltage Scaling for Space Applications

Le Dinh Trang Dang; Dongkyu Seo; Jin Woo Han; Jinsang Kim; Ik Joon Chang

doi:10.1109/ASSCC.2018.8579254

A 28mn FD-SOI 4KB Radiation-hardened 12T SRAM Macro with 0.6 ∼ 1V Wide Dynamic Voltage Scaling for Space Applications

Le Dinh Trang Dang, Dongkyu Seo, Jin Woo Han, Jinsang Kim, Ik Joon Chang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

7 Citations (Scopus)

Abstract

We present a soft-error immune 12T SRAM cell for space applications, namely we-Quatro, and design a 4KB radiation-hardened macro of this SRAM in 28nm FD-SOI. Previously, 10T Quatro has been considered promising for this purpose, however suffers from extremely poor writability under parametric variations. Despite of two more transistors, we-Quatro delivers the same cell area as Quatro. Our simulations and measurements show that our 4KB macro provides robust read and write stabilities for wide supply voltage range of 0.6∼1V. More critically, the measured soft-error resilience of we-Quatro is comparable to that of Quatro, significantly better than that of 6T SRAM.

Original language	English
Title of host publication	2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	133-134
Number of pages	2
ISBN (Electronic)	9781538664124
DOIs	https://doi.org/10.1109/ASSCC.2018.8579254
Publication status	Published - 14 Dec 2018
Event	2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Tainan, Taiwan, Province of China Duration: 5 Nov 2018 → 7 Nov 2018

Publication series

Name	2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings

Conference

Conference	2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018
Country/Territory	Taiwan, Province of China
City	Tainan
Period	5/11/18 → 7/11/18

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

Keywords

SRAM
single-event upset
soft-error

Access to Document

10.1109/ASSCC.2018.8579254

Cite this

Trang Dang, L. D., Seo, D., Han, J. W., Kim, J., & Chang, I. J. (2018). A 28mn FD-SOI 4KB Radiation-hardened 12T SRAM Macro with 0.6 ∼ 1V Wide Dynamic Voltage Scaling for Space Applications. In 2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings (pp. 133-134). Article 8579254 (2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ASSCC.2018.8579254

Trang Dang, Le Dinh ; Seo, Dongkyu ; Han, Jin Woo et al. / A 28mn FD-SOI 4KB Radiation-hardened 12T SRAM Macro with 0.6 ∼ 1V Wide Dynamic Voltage Scaling for Space Applications. 2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 133-134 (2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings).

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title = "A 28mn FD-SOI 4KB Radiation-hardened 12T SRAM Macro with 0.6 ∼ 1V Wide Dynamic Voltage Scaling for Space Applications",

abstract = "We present a soft-error immune 12T SRAM cell for space applications, namely we-Quatro, and design a 4KB radiation-hardened macro of this SRAM in 28nm FD-SOI. Previously, 10T Quatro has been considered promising for this purpose, however suffers from extremely poor writability under parametric variations. Despite of two more transistors, we-Quatro delivers the same cell area as Quatro. Our simulations and measurements show that our 4KB macro provides robust read and write stabilities for wide supply voltage range of 0.6∼1V. More critically, the measured soft-error resilience of we-Quatro is comparable to that of Quatro, significantly better than that of 6T SRAM.",

keywords = "SRAM, single-event upset, soft-error",

author = "{Trang Dang}, {Le Dinh} and Dongkyu Seo and Han, {Jin Woo} and Jinsang Kim and Chang, {Ik Joon}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 ; Conference date: 05-11-2018 Through 07-11-2018",

year = "2018",

month = dec,

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doi = "10.1109/ASSCC.2018.8579254",

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Trang Dang, LD, Seo, D, Han, JW, Kim, J & Chang, IJ 2018, A 28mn FD-SOI 4KB Radiation-hardened 12T SRAM Macro with 0.6 ∼ 1V Wide Dynamic Voltage Scaling for Space Applications. in 2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings., 8579254, 2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 133-134, 2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018, Tainan, Taiwan, Province of China, 5/11/18. https://doi.org/10.1109/ASSCC.2018.8579254

A 28mn FD-SOI 4KB Radiation-hardened 12T SRAM Macro with 0.6 ∼ 1V Wide Dynamic Voltage Scaling for Space Applications. / Trang Dang, Le Dinh; Seo, Dongkyu; Han, Jin Woo et al.
2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. p. 133-134 8579254 (2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - We present a soft-error immune 12T SRAM cell for space applications, namely we-Quatro, and design a 4KB radiation-hardened macro of this SRAM in 28nm FD-SOI. Previously, 10T Quatro has been considered promising for this purpose, however suffers from extremely poor writability under parametric variations. Despite of two more transistors, we-Quatro delivers the same cell area as Quatro. Our simulations and measurements show that our 4KB macro provides robust read and write stabilities for wide supply voltage range of 0.6∼1V. More critically, the measured soft-error resilience of we-Quatro is comparable to that of Quatro, significantly better than that of 6T SRAM.

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Trang Dang LD, Seo D, Han JW, Kim J , Chang IJ. A 28mn FD-SOI 4KB Radiation-hardened 12T SRAM Macro with 0.6 ∼ 1V Wide Dynamic Voltage Scaling for Space Applications. In 2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. p. 133-134. 8579254. (2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings). doi: 10.1109/ASSCC.2018.8579254

A 28mn FD-SOI 4KB Radiation-hardened 12T SRAM Macro with 0.6 ∼ 1V Wide Dynamic Voltage Scaling for Space Applications

Abstract

Publication series

Conference

Bibliographical note

Keywords

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