A 500 dpi optical image sensor using a short channel Hydrogenated amorphous silicon thin-film transistor

S. H. Kim; S. H. Park; Y. D. Nam; H. J. Kim; S. M. Hong; J. H. Hur; J. Jang

A 500 dpi optical image sensor using a short channel Hydrogenated amorphous silicon thin-film transistor

S. H. Kim
, S. H. Park
, Y. D. Nam
, H. J. Kim
, S. M. Hong
, J. H. Hur
, J. Jang

Research output: Contribution to conference › Paper › peer-review

8 Citations (Scopus)

Abstract

We developed a 500 dpi image sensor on glass with 256 × 300 pixels. The switching and sensor devices are amorphous silicon thin-fim transistor. The TFT with a channel legth of 2 μm exhibited a field effect mobility of 0.4 cm²/V·s, a threshold voltage of 4 V and on/off current ratio higher than 10⁷. A 500 dpi image sensor with 2 urn channel TFTs for switching and sensor was demonstrated with an amorphous silicon.

Original language	English
Pages	2003-2005
Number of pages	3
Publication status	Published - 2005
Event	IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005 - Takamatsu, Japan Duration: 6 Dec 2005 → 9 Dec 2005

Conference

Conference	IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005
Country/Territory	Japan
City	Takamatsu
Period	6/12/05 → 9/12/05

Cite this

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title = "A 500 dpi optical image sensor using a short channel Hydrogenated amorphous silicon thin-film transistor",

abstract = "We developed a 500 dpi image sensor on glass with 256 × 300 pixels. The switching and sensor devices are amorphous silicon thin-fim transistor. The TFT with a channel legth of 2 μm exhibited a field effect mobility of 0.4 cm2/V·s, a threshold voltage of 4 V and on/off current ratio higher than 107. A 500 dpi image sensor with 2 urn channel TFTs for switching and sensor was demonstrated with an amorphous silicon.",

author = "Kim, \{S. H.\} and Park, \{S. H.\} and Nam, \{Y. D.\} and Kim, \{H. J.\} and Hong, \{S. M.\} and Hur, \{J. H.\} and J. Jang",

year = "2005",

language = "English",

pages = "2003--2005",

note = "IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005 ; Conference date: 06-12-2005 Through 09-12-2005",

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TY - CONF

T1 - A 500 dpi optical image sensor using a short channel Hydrogenated amorphous silicon thin-film transistor

AU - Kim, S. H.

AU - Park, S. H.

AU - Nam, Y. D.

AU - Kim, H. J.

AU - Hong, S. M.

AU - Hur, J. H.

AU - Jang, J.

PY - 2005

Y1 - 2005

N2 - We developed a 500 dpi image sensor on glass with 256 × 300 pixels. The switching and sensor devices are amorphous silicon thin-fim transistor. The TFT with a channel legth of 2 μm exhibited a field effect mobility of 0.4 cm2/V·s, a threshold voltage of 4 V and on/off current ratio higher than 107. A 500 dpi image sensor with 2 urn channel TFTs for switching and sensor was demonstrated with an amorphous silicon.

AB - We developed a 500 dpi image sensor on glass with 256 × 300 pixels. The switching and sensor devices are amorphous silicon thin-fim transistor. The TFT with a channel legth of 2 μm exhibited a field effect mobility of 0.4 cm2/V·s, a threshold voltage of 4 V and on/off current ratio higher than 107. A 500 dpi image sensor with 2 urn channel TFTs for switching and sensor was demonstrated with an amorphous silicon.

UR - https://www.scopus.com/pages/publications/33644609066

M3 - Paper

AN - SCOPUS:33644609066

SP - 2003

EP - 2005

T2 - IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005

Y2 - 6 December 2005 through 9 December 2005

ER -

A 500 dpi optical image sensor using a short channel Hydrogenated amorphous silicon thin-film transistor

Abstract

Conference

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