A comparison between a-Si:H TFT and poly-Si TFT for a pixel in AMOLED

Yong Kyun Lee; Kyu Man Kim; Jai Ii Ryu; Young Dong Kim; Keon Ho Yoo; Jin Jang; Ho Young Jeong; Dong Jun Choo

A comparison between a-Si:H TFT and poly-Si TFT for a pixel in AMOLED

Yong Kyun Lee
, Kyu Man Kim
, Jai Ii Ryu
, Young Dong Kim
, Keon Ho Yoo
, Jin Jang
, Ho Young Jeong
, Dong Jun Choo

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We have demonstrated that both hydrogenated amorphous silicon (a-Si:H) and polycrystalline silicon (poly-Si) TFTs can be used as switching and driving TFTs for an active matrix organic light emitting diode (AMOLED). However, the a-Si:H TFT should have a channel width to length ratio of at least 50. The off-current level of switching TFT should be less than 1 pA to keep the brightness within 3% during one frame. An AMPLED has less power consumption compared to AMOLED.

Original language	English
Pages (from-to)	S291-S295
Journal	Journal of the Korean Physical Society
Volume	39
Issue number	SUPPL. Part 1
Publication status	Published - Dec 2001

Cite this

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title = "A comparison between a-Si:H TFT and poly-Si TFT for a pixel in AMOLED",

abstract = "We have demonstrated that both hydrogenated amorphous silicon (a-Si:H) and polycrystalline silicon (poly-Si) TFTs can be used as switching and driving TFTs for an active matrix organic light emitting diode (AMOLED). However, the a-Si:H TFT should have a channel width to length ratio of at least 50. The off-current level of switching TFT should be less than 1 pA to keep the brightness within 3\% during one frame. An AMPLED has less power consumption compared to AMOLED.",

author = "Lee, \{Yong Kyun\} and Kim, \{Kyu Man\} and Ryu, \{Jai Ii\} and Kim, \{Young Dong\} and Yoo, \{Keon Ho\} and Jin Jang and Jeong, \{Ho Young\} and Choo, \{Dong Jun\}",

year = "2001",

month = dec,

language = "English",

volume = "39",

pages = "S291--S295",

journal = "Journal of the Korean Physical Society",

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T1 - A comparison between a-Si:H TFT and poly-Si TFT for a pixel in AMOLED

AU - Lee, Yong Kyun

AU - Kim, Kyu Man

AU - Ryu, Jai Ii

AU - Kim, Young Dong

AU - Yoo, Keon Ho

AU - Jang, Jin

AU - Jeong, Ho Young

AU - Choo, Dong Jun

PY - 2001/12

Y1 - 2001/12

N2 - We have demonstrated that both hydrogenated amorphous silicon (a-Si:H) and polycrystalline silicon (poly-Si) TFTs can be used as switching and driving TFTs for an active matrix organic light emitting diode (AMOLED). However, the a-Si:H TFT should have a channel width to length ratio of at least 50. The off-current level of switching TFT should be less than 1 pA to keep the brightness within 3% during one frame. An AMPLED has less power consumption compared to AMOLED.

AB - We have demonstrated that both hydrogenated amorphous silicon (a-Si:H) and polycrystalline silicon (poly-Si) TFTs can be used as switching and driving TFTs for an active matrix organic light emitting diode (AMOLED). However, the a-Si:H TFT should have a channel width to length ratio of at least 50. The off-current level of switching TFT should be less than 1 pA to keep the brightness within 3% during one frame. An AMPLED has less power consumption compared to AMOLED.

UR - https://www.scopus.com/pages/publications/0035542151

M3 - Article

AN - SCOPUS:0035542151

SN - 0374-4884

VL - 39

SP - S291-S295

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - SUPPL. Part 1

ER -

A comparison between a-Si:H TFT and poly-Si TFT for a pixel in AMOLED

Abstract

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