A Facile Doping Process of the Organic Inter-Layer Dielectric for Self-Aligned Coplanar In-Ga-Zn-O Thin-Film Transistors

Hyo Eun Kim; Mamoru Furuta; Sung Min Yoon

doi:10.1109/LED.2020.2964270

A Facile Doping Process of the Organic Inter-Layer Dielectric for Self-Aligned Coplanar In-Ga-Zn-O Thin-Film Transistors

Hyo Eun Kim
, Mamoru Furuta
, Sung Min Yoon

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

A new doping technique to form the conductive source/drain regions of self-aligned coplanar In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) was demonstrated. The electrical resistivity of the IGZO film was reduced to 3.8×10^-4Ω· cm after simply coating the organic inter-layer dielectric thin film. The carrier mobility at the saturation region and subthreshold swing of the fabricated IGZO TFTs were 18.4 cm²/Vs and of 150 mV/dec, respectively. The channel width-normalized contact resistance was estimated to be as low as 12 Ω· cm, verifying the ohmic behaviors. Robust device stabilities were also confirmed under bias-stress and temperature-stress conditions.

Original language	English
Article number	8950387
Pages (from-to)	393-396
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	41
Issue number	3
DOIs	https://doi.org/10.1109/LED.2020.2964270
Publication status	Published - Mar 2020

Bibliographical note

Publisher Copyright:
© 1980-2012 IEEE.

Keywords

In-Ga-Zn-O thin-film transistor
Self-aligned coplanar structure
organic inter-layer dielectric

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10.1109/LED.2020.2964270

Cite this

@article{40a79696dbee4c879c85987a95654c3c,

title = "A Facile Doping Process of the Organic Inter-Layer Dielectric for Self-Aligned Coplanar In-Ga-Zn-O Thin-Film Transistors",

abstract = "A new doping technique to form the conductive source/drain regions of self-aligned coplanar In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) was demonstrated. The electrical resistivity of the IGZO film was reduced to 3.8×10-4Ω· cm after simply coating the organic inter-layer dielectric thin film. The carrier mobility at the saturation region and subthreshold swing of the fabricated IGZO TFTs were 18.4 cm2/Vs and of 150 mV/dec, respectively. The channel width-normalized contact resistance was estimated to be as low as 12 Ω· cm, verifying the ohmic behaviors. Robust device stabilities were also confirmed under bias-stress and temperature-stress conditions.",

keywords = "In-Ga-Zn-O thin-film transistor, Self-aligned coplanar structure, organic inter-layer dielectric",

author = "Kim, \{Hyo Eun\} and Mamoru Furuta and Yoon, \{Sung Min\}",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2020",

month = mar,

doi = "10.1109/LED.2020.2964270",

language = "English",

volume = "41",

pages = "393--396",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - A Facile Doping Process of the Organic Inter-Layer Dielectric for Self-Aligned Coplanar In-Ga-Zn-O Thin-Film Transistors

AU - Kim, Hyo Eun

AU - Furuta, Mamoru

AU - Yoon, Sung Min

PY - 2020/3

Y1 - 2020/3

N2 - A new doping technique to form the conductive source/drain regions of self-aligned coplanar In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) was demonstrated. The electrical resistivity of the IGZO film was reduced to 3.8×10-4Ω· cm after simply coating the organic inter-layer dielectric thin film. The carrier mobility at the saturation region and subthreshold swing of the fabricated IGZO TFTs were 18.4 cm2/Vs and of 150 mV/dec, respectively. The channel width-normalized contact resistance was estimated to be as low as 12 Ω· cm, verifying the ohmic behaviors. Robust device stabilities were also confirmed under bias-stress and temperature-stress conditions.

AB - A new doping technique to form the conductive source/drain regions of self-aligned coplanar In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) was demonstrated. The electrical resistivity of the IGZO film was reduced to 3.8×10-4Ω· cm after simply coating the organic inter-layer dielectric thin film. The carrier mobility at the saturation region and subthreshold swing of the fabricated IGZO TFTs were 18.4 cm2/Vs and of 150 mV/dec, respectively. The channel width-normalized contact resistance was estimated to be as low as 12 Ω· cm, verifying the ohmic behaviors. Robust device stabilities were also confirmed under bias-stress and temperature-stress conditions.

KW - In-Ga-Zn-O thin-film transistor

KW - Self-aligned coplanar structure

KW - organic inter-layer dielectric

UR - https://www.scopus.com/pages/publications/85080892629

U2 - 10.1109/LED.2020.2964270

DO - 10.1109/LED.2020.2964270

M3 - Article

AN - SCOPUS:85080892629

SN - 0741-3106

VL - 41

SP - 393

EP - 396

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 3

M1 - 8950387

ER -

A Facile Doping Process of the Organic Inter-Layer Dielectric for Self-Aligned Coplanar In-Ga-Zn-O Thin-Film Transistors

Abstract

Bibliographical note

Keywords

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