A formation of cobalt silicide on silicon field emitter arrays by electrical stress

Jong Duk Lee; Sung Hun Jin; Byung Chang Shim; Byung Gook Park

doi:10.1109/55.915603

A formation of cobalt silicide on silicon field emitter arrays by electrical stress

Jong Duk Lee
, Sung Hun Jin
, Byung Chang Shim
, Byung Gook Park

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

A novel process utilizing electrical stress is proposed for the formation of Co silicide on single crystal silicon (c-Si) FEAs to improve the field emission characteristics. Co silicide FEAs formed by electrical stress (ES) exhibited a significant improvement in turn-on voltage and emission current compared with c-Si FEAs. The improvement mainly comes from the lower effective work function of Co silicide and less blunting of tips during silicidation by electrical stress in an ultra high vacuum (UHV) environment less than 10^-8 torr.

Original language	English
Pages (from-to)	173-175
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	22
Issue number	4
DOIs	https://doi.org/10.1109/55.915603
Publication status	Published - Apr 2001

Keywords

Co silicide
Effective work function
Electrical stress (ES)
FEAs

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10.1109/55.915603

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abstract = "A novel process utilizing electrical stress is proposed for the formation of Co silicide on single crystal silicon (c-Si) FEAs to improve the field emission characteristics. Co silicide FEAs formed by electrical stress (ES) exhibited a significant improvement in turn-on voltage and emission current compared with c-Si FEAs. The improvement mainly comes from the lower effective work function of Co silicide and less blunting of tips during silicidation by electrical stress in an ultra high vacuum (UHV) environment less than 10-8 torr.",

keywords = "Co silicide, Effective work function, Electrical stress (ES), FEAs",

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year = "2001",

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AU - Lee, Jong Duk

AU - Jin, Sung Hun

AU - Shim, Byung Chang

AU - Park, Byung Gook

PY - 2001/4

Y1 - 2001/4

N2 - A novel process utilizing electrical stress is proposed for the formation of Co silicide on single crystal silicon (c-Si) FEAs to improve the field emission characteristics. Co silicide FEAs formed by electrical stress (ES) exhibited a significant improvement in turn-on voltage and emission current compared with c-Si FEAs. The improvement mainly comes from the lower effective work function of Co silicide and less blunting of tips during silicidation by electrical stress in an ultra high vacuum (UHV) environment less than 10-8 torr.

AB - A novel process utilizing electrical stress is proposed for the formation of Co silicide on single crystal silicon (c-Si) FEAs to improve the field emission characteristics. Co silicide FEAs formed by electrical stress (ES) exhibited a significant improvement in turn-on voltage and emission current compared with c-Si FEAs. The improvement mainly comes from the lower effective work function of Co silicide and less blunting of tips during silicidation by electrical stress in an ultra high vacuum (UHV) environment less than 10-8 torr.

KW - Co silicide

KW - Effective work function

KW - Electrical stress (ES)

KW - FEAs

UR - https://www.scopus.com/pages/publications/0035308744

U2 - 10.1109/55.915603

DO - 10.1109/55.915603

M3 - Article

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SN - 0741-3106

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SP - 173

EP - 175

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 4

ER -

A formation of cobalt silicide on silicon field emitter arrays by electrical stress

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Keywords

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