A full-swing a-IGZO TFT-based inverter with a top gate-induced depletion load

Min Hyuk Choi; Man Ju Seok; Mallory Mativenga; Di Geng; Dong Han Kang; Jin Jang

A full-swing a-IGZO TFT-based inverter with a top gate-induced depletion load

Min Hyuk Choi, Man Ju Seok, Mallory Mativenga, Di Geng, Dong Han Kang, Jin Jang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

A high performance amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT)-based inverter is demonstrated using the dual gate TFT structure. The results indicate that the load of the inverter behaves like a depletion-mode TFT when the top gate is under a positive bias. The proposed inverter shows much improved switching characteristics such as a wider swing range and higher noise margins, which are all achieved without the requirement of an additional process step to make the depletion load.

Original language	English
Title of host publication	49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011
Pages	1144-1147
Number of pages	4
Publication status	Published - 2011
Event	49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011 - Los Angeles, CA, United States Duration: 15 May 2011 → 20 May 2011

Publication series

Name	49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011
Volume	3

Conference

Conference	49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011
Country/Territory	United States
City	Los Angeles, CA
Period	15/05/11 → 20/05/11

Cite this

@inproceedings{354e4d70bbb94ae29db0c5000fd103e6,

title = "A full-swing a-IGZO TFT-based inverter with a top gate-induced depletion load",

abstract = "A high performance amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT)-based inverter is demonstrated using the dual gate TFT structure. The results indicate that the load of the inverter behaves like a depletion-mode TFT when the top gate is under a positive bias. The proposed inverter shows much improved switching characteristics such as a wider swing range and higher noise margins, which are all achieved without the requirement of an additional process step to make the depletion load.",

author = "Choi, {Min Hyuk} and Seok, {Man Ju} and Mallory Mativenga and Di Geng and Kang, {Dong Han} and Jin Jang",

year = "2011",

language = "English",

isbn = "9781618390967",

series = "49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011",

pages = "1144--1147",

booktitle = "49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011",

}

Choi, MH, Seok, MJ, Mativenga, M, Geng, D, Kang, DH & Jang, J 2011, A full-swing a-IGZO TFT-based inverter with a top gate-induced depletion load. in 49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011. 49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011, vol. 3, pp. 1144-1147, 49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011, Los Angeles, CA, United States, 15/05/11.

A full-swing a-IGZO TFT-based inverter with a top gate-induced depletion load. / Choi, Min Hyuk; Seok, Man Ju; Mativenga, Mallory et al.
49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011. 2011. p. 1144-1147 (49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011; Vol. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Choi, Min Hyuk

AU - Seok, Man Ju

AU - Mativenga, Mallory

AU - Geng, Di

AU - Kang, Dong Han

AU - Jang, Jin

PY - 2011

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N2 - A high performance amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT)-based inverter is demonstrated using the dual gate TFT structure. The results indicate that the load of the inverter behaves like a depletion-mode TFT when the top gate is under a positive bias. The proposed inverter shows much improved switching characteristics such as a wider swing range and higher noise margins, which are all achieved without the requirement of an additional process step to make the depletion load.

AB - A high performance amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT)-based inverter is demonstrated using the dual gate TFT structure. The results indicate that the load of the inverter behaves like a depletion-mode TFT when the top gate is under a positive bias. The proposed inverter shows much improved switching characteristics such as a wider swing range and higher noise margins, which are all achieved without the requirement of an additional process step to make the depletion load.

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M3 - Conference contribution

AN - SCOPUS:84860878919

SN - 9781618390967

T3 - 49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011

SP - 1144

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BT - 49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011

T2 - 49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011

Y2 - 15 May 2011 through 20 May 2011

ER -

A full-swing a-IGZO TFT-based inverter with a top gate-induced depletion load

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