Abstract
Due to aggressive scaling down, multiple-node-upset hardened design has become a major concern regarding radiation hardening. The proposed latch overcomes the architecture and performance limitations of state-of-the-art double-node-upset (DNU)-resilient latches. A novel stacked latch element is developed with multiple thresholds, regular architecture, increased number of single-event upset (SEU)-insensitive nodes, low power dissipation, and high robustness. The radiation-aware layout considering layout-level issues is also proposed. Compared with state-of-the-art DNU-resilient latches, simulation results show that the proposed latch exhibits up to 92% delay and 80% power reduction in data activity ratio (DAR) of 100%. The radiation simulation using the dual-double exponential current source model shows that the proposed latch has the strongest radiation-hardening capability among the other DNU-resilient latches.
Original language | English |
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Article number | 2465 |
Journal | Electronics (Switzerland) |
Volume | 11 |
Issue number | 15 |
DOIs | |
Publication status | Published - Aug 2022 |
Bibliographical note
Publisher Copyright:© 2022 by the authors.
Keywords
- double-node upset (DNU)
- radiation hardening by design (RHBD)
- radiation-hardened latch
- single event upset polarity
- single-node upset (SNU)
- soft error
- static random-access memory (SRAM)