A Fully Polarity-Aware Double-Node-Upset-Resilient Latch Design

Jung Jin Park, Young Min Kang, Geon Hak Kim, Ik Joon Chang, Jinsang Kim

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Due to aggressive scaling down, multiple-node-upset hardened design has become a major concern regarding radiation hardening. The proposed latch overcomes the architecture and performance limitations of state-of-the-art double-node-upset (DNU)-resilient latches. A novel stacked latch element is developed with multiple thresholds, regular architecture, increased number of single-event upset (SEU)-insensitive nodes, low power dissipation, and high robustness. The radiation-aware layout considering layout-level issues is also proposed. Compared with state-of-the-art DNU-resilient latches, simulation results show that the proposed latch exhibits up to 92% delay and 80% power reduction in data activity ratio (DAR) of 100%. The radiation simulation using the dual-double exponential current source model shows that the proposed latch has the strongest radiation-hardening capability among the other DNU-resilient latches.

Original languageEnglish
Article number2465
JournalElectronics (Switzerland)
Volume11
Issue number15
DOIs
Publication statusPublished - Aug 2022

Bibliographical note

Publisher Copyright:
© 2022 by the authors.

Keywords

  • double-node upset (DNU)
  • radiation hardening by design (RHBD)
  • radiation-hardened latch
  • single event upset polarity
  • single-node upset (SNU)
  • soft error
  • static random-access memory (SRAM)

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