A high-performance broadband self-powered photodetector employing an MoS₂/LaVO₃ heterojunction structure

The combination of a high absorption LaVO₃ in the visible region and two-dimensional semiconductor material is an ideal structure for high-performance broadband photodetector (PD) applications. We report MoS₂/LaVO₃ heterojunction PDs. The p-n junctions were found to show good PD properties, including a photocurrent/dark current ratio of 10⁴ at zero voltage, indicating “self-powered.” The PDs exhibit a responsivity (R) of 0.14 AW⁻¹ and a detectivity of 4.5 × 10⁹ cm Hz^1/2 W⁻¹ at 650 nm. The linear dynamic range and response/recovery times of the PDs are 83 dB and 260/410 μs, respectively. Notably, the response time of the PDs is faster than those of previously reported chemical vapor deposition MoS₂-based hetero-structured PDs. Furthermore, the loss of the R is only 16% of its initial value, whereas the PDs are kept for 2000 h in the air. Additionally, the R loss of the PD decreases by only 16% of its original value during 2000 h under air at 25 °C temperature and 30% humidity. These results demonstrate the potential of MoS₂/LaVO₃ heterojunctions as self-powered optoelectronic devices.