A high performance polycrystalline silicon thin film transistor using a metal induced crystallization with a Ni solution

Soo Young Yoon; Sung Ki Kim; Jae Young Oh; Young Jin Choi; Woo Sung Shon; Chae Ok Kim; Jin Jang

doi:10.1109/IMNC.1998.730107

A high performance polycrystalline silicon thin film transistor using a metal induced crystallization with a Ni solution

Soo Young Yoon, Sung Ki Kim, Jae Young Oh, Young Jin Choi, Woo Sung Shon, Chae Ok Kim, Jin Jang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	Digest of Papers - Microprocesses and Nanotechnology 1998
Subtitle of host publication	1998 International Microprocesses and Nanotechnology Conference
Editors	Hyung Joon Yoo, Shinji Okazaki, Jinho Ahn, Ohyun Kim, Masanori Komuro
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	331-332
Number of pages	2
ISBN (Electronic)	4930813832, 9784930813831
DOIs	https://doi.org/10.1109/IMNC.1998.730107
Publication status	Published - 1998
Event	1998 International Microprocesses and Nanotechnology Conference, MNC 1998 - Kyoungju, Korea, Republic of Duration: 13 Jul 1998 → 16 Jul 1998

Publication series

Name	Digest of Papers - Microprocesses and Nanotechnology 1998: 1998 International Microprocesses and Nanotechnology Conference
Volume	1998-July

Conference

Conference	1998 International Microprocesses and Nanotechnology Conference, MNC 1998
Country/Territory	Korea, Republic of
City	Kyoungju
Period	13/07/98 → 16/07/98

Bibliographical note

Funding Information:
good ohmic contact material The MIC poly-Si TFT using a NI solution show the higher electron mobility than that of conventional MIC poly-Si TFT, which is resulted from better crystallinity (large grains and no microtwins) and lower metal incorporation into the channel layer by the reduction of metal contamination in the MIC poly-Si The NI concentration in the MIC poly-Si using NI solution is much lower than that in MIC poly-Su sing sputtered NI layer This work was supported by G-7 project of Korea

Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.

Access to Document

10.1109/IMNC.1998.730107

Cite this

Yoon, S. Y., Kim, S. K., Oh, J. Y., Choi, Y. J., Shon, W. S., Kim, C. O., & Jang, J. (1998). A high performance polycrystalline silicon thin film transistor using a metal induced crystallization with a Ni solution. In H. J. Yoo, S. Okazaki, J. Ahn, O. Kim, & M. Komuro (Eds.), Digest of Papers - Microprocesses and Nanotechnology 1998: 1998 International Microprocesses and Nanotechnology Conference (pp. 331-332). Article 730107 (Digest of Papers - Microprocesses and Nanotechnology 1998: 1998 International Microprocesses and Nanotechnology Conference; Vol. 1998-July). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.1998.730107

Yoon, Soo Young ; Kim, Sung Ki ; Oh, Jae Young et al. / A high performance polycrystalline silicon thin film transistor using a metal induced crystallization with a Ni solution. Digest of Papers - Microprocesses and Nanotechnology 1998: 1998 International Microprocesses and Nanotechnology Conference. editor / Hyung Joon Yoo ; Shinji Okazaki ; Jinho Ahn ; Ohyun Kim ; Masanori Komuro. Institute of Electrical and Electronics Engineers Inc., 1998. pp. 331-332 (Digest of Papers - Microprocesses and Nanotechnology 1998: 1998 International Microprocesses and Nanotechnology Conference).

@inproceedings{20aebae818cc4b7aa9dff8ee9d4a5011,

title = "A high performance polycrystalline silicon thin film transistor using a metal induced crystallization with a Ni solution",

author = "Yoon, {Soo Young} and Kim, {Sung Ki} and Oh, {Jae Young} and Choi, {Young Jin} and Shon, {Woo Sung} and Kim, {Chae Ok} and Jin Jang",

note = "Funding Information: good ohmic contact material The MIC poly-Si TFT using a NI solution show the higher electron mobility than that of conventional MIC poly-Si TFT, which is resulted from better crystallinity (large grains and no microtwins) and lower metal incorporation into the channel layer by the reduction of metal contamination in the MIC poly-Si The NI concentration in the MIC poly-Si using NI solution is much lower than that in MIC poly-Su sing sputtered NI layer This work was supported by G-7 project of Korea Copyright: Copyright 2018 Elsevier B.V., All rights reserved.; 1998 International Microprocesses and Nanotechnology Conference, MNC 1998 ; Conference date: 13-07-1998 Through 16-07-1998",

year = "1998",

doi = "10.1109/IMNC.1998.730107",

language = "English",

series = "Digest of Papers - Microprocesses and Nanotechnology 1998: 1998 International Microprocesses and Nanotechnology Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "331--332",

editor = "Yoo, {Hyung Joon} and Shinji Okazaki and Jinho Ahn and Ohyun Kim and Masanori Komuro",

booktitle = "Digest of Papers - Microprocesses and Nanotechnology 1998",

address = "United States",

}

Yoon, SY, Kim, SK, Oh, JY, Choi, YJ, Shon, WS, Kim, CO & Jang, J 1998, A high performance polycrystalline silicon thin film transistor using a metal induced crystallization with a Ni solution. in HJ Yoo, S Okazaki, J Ahn, O Kim & M Komuro (eds), Digest of Papers - Microprocesses and Nanotechnology 1998: 1998 International Microprocesses and Nanotechnology Conference., 730107, Digest of Papers - Microprocesses and Nanotechnology 1998: 1998 International Microprocesses and Nanotechnology Conference, vol. 1998-July, Institute of Electrical and Electronics Engineers Inc., pp. 331-332, 1998 International Microprocesses and Nanotechnology Conference, MNC 1998, Kyoungju, Korea, Republic of, 13/07/98. https://doi.org/10.1109/IMNC.1998.730107

A high performance polycrystalline silicon thin film transistor using a metal induced crystallization with a Ni solution. / Yoon, Soo Young; Kim, Sung Ki; Oh, Jae Young et al.
Digest of Papers - Microprocesses and Nanotechnology 1998: 1998 International Microprocesses and Nanotechnology Conference. ed. / Hyung Joon Yoo; Shinji Okazaki; Jinho Ahn; Ohyun Kim; Masanori Komuro. Institute of Electrical and Electronics Engineers Inc., 1998. p. 331-332 730107 (Digest of Papers - Microprocesses and Nanotechnology 1998: 1998 International Microprocesses and Nanotechnology Conference; Vol. 1998-July).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A high performance polycrystalline silicon thin film transistor using a metal induced crystallization with a Ni solution

AU - Yoon, Soo Young

AU - Kim, Sung Ki

AU - Oh, Jae Young

AU - Choi, Young Jin

AU - Shon, Woo Sung

AU - Kim, Chae Ok

AU - Jang, Jin

N1 - Funding Information: good ohmic contact material The MIC poly-Si TFT using a NI solution show the higher electron mobility than that of conventional MIC poly-Si TFT, which is resulted from better crystallinity (large grains and no microtwins) and lower metal incorporation into the channel layer by the reduction of metal contamination in the MIC poly-Si The NI concentration in the MIC poly-Si using NI solution is much lower than that in MIC poly-Su sing sputtered NI layer This work was supported by G-7 project of Korea Copyright: Copyright 2018 Elsevier B.V., All rights reserved.

PY - 1998

Y1 - 1998

UR - http://www.scopus.com/inward/record.url?scp=85051445190&partnerID=8YFLogxK

U2 - 10.1109/IMNC.1998.730107

DO - 10.1109/IMNC.1998.730107

M3 - Conference contribution

AN - SCOPUS:85051445190

T3 - Digest of Papers - Microprocesses and Nanotechnology 1998: 1998 International Microprocesses and Nanotechnology Conference

SP - 331

EP - 332

BT - Digest of Papers - Microprocesses and Nanotechnology 1998

A2 - Yoo, Hyung Joon

A2 - Okazaki, Shinji

A2 - Ahn, Jinho

A2 - Kim, Ohyun

A2 - Komuro, Masanori

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 1998 International Microprocesses and Nanotechnology Conference, MNC 1998

Y2 - 13 July 1998 through 16 July 1998

ER -

Yoon SY, Kim SK, Oh JY, Choi YJ, Shon WS, Kim CO et al. A high performance polycrystalline silicon thin film transistor using a metal induced crystallization with a Ni solution. In Yoo HJ, Okazaki S, Ahn J, Kim O, Komuro M, editors, Digest of Papers - Microprocesses and Nanotechnology 1998: 1998 International Microprocesses and Nanotechnology Conference. Institute of Electrical and Electronics Engineers Inc. 1998. p. 331-332. 730107. (Digest of Papers - Microprocesses and Nanotechnology 1998: 1998 International Microprocesses and Nanotechnology Conference). doi: 10.1109/IMNC.1998.730107

A high performance polycrystalline silicon thin film transistor using a metal induced crystallization with a Ni solution

Publication series

Conference

Bibliographical note

Access to Document

Other files and links

Cite this