Abstract
We studied the deposition of a well-ordered pentacene film by vapour phase deposition. The optimizations of the growth of pentacene are carried out by varying the gas pressure in the reactor and substrate temperature. We found that the grain size depends strongly on the gas pressure in the reactor. The grain size of 20 μm has been obtained at the gas pressure of 200 Torr. The film was found to be strongly (001) oriented and its grain size decreases with decreasing the gas pressure.
| Original language | English |
|---|---|
| Pages (from-to) | S428-S430 |
| Journal | Journal of the Korean Physical Society |
| Volume | 42 |
| Issue number | SPEC. |
| Publication status | Published - Feb 2003 |
| Event | Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 - Cheju Island, Korea, Republic of Duration: 20 Aug 2002 → 23 Aug 2002 |
Keywords
- Organic semiconductor
- Pentacene