Abstract
In this paper, we, for the first time, proposed and fabricated a nonvolatile pentacene organic memory (PENTOM) with a triple-layer gate insulator on a poly-ethylene-terephthalate (PET) flexible substrate, and their memory characteristics in fabricated devices and mechanisms are investigated.
Original language | English |
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Title of host publication | 61st Device Research Conference, DRC 2003 - Conference Digest |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 185-186 |
Number of pages | 2 |
ISBN (Electronic) | 0780377273 |
DOIs | |
Publication status | Published - 2003 |
Event | 61st Device Research Conference, DRC 2003 - Salt Lake City, United States Duration: 23 Jun 2003 → 25 Jun 2003 |
Publication series
Name | Device Research Conference - Conference Digest, DRC |
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Volume | 2003-January |
ISSN (Print) | 1548-3770 |
Conference
Conference | 61st Device Research Conference, DRC 2003 |
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Country/Territory | United States |
City | Salt Lake City |
Period | 23/06/03 → 25/06/03 |
Bibliographical note
Publisher Copyright:© 2003 IEEE.
Keywords
- Electrodes
- Electrons
- Insulation
- Nonvolatile memory
- Organic thin film transistors
- Pentacene
- Positron emission tomography
- Substrates
- Thin film transistors
- Threshold voltage