Abstract
Novel 1T2C-type ferroelectric memory cells were fabricated and their memory characteristics were invetigated. The degradation in data retention due to depolarization field is overcome by this new type of ferroelectric memory. The stored data was nondestructively readout and the retention time longer than that of ferroelectric gate field effect transistor (FET) was demonstrated. The memory had both the features of FET-type memory and capacitor-type.
| Original language | English |
|---|---|
| Pages (from-to) | 317-320 |
| Number of pages | 4 |
| Journal | Technical Digest - International Electron Devices Meeting |
| Publication status | Published - 2000 |
| Event | 2000 IEEE International Electron Devices Meeting - San Francisco, CA, United States Duration: 10 Dec 2000 → 13 Dec 2000 |
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