A p-channel SMC poly-Si thin film-transistor with a GOLDD structure

Yong Duck Son; Kyu Sik Cho; Seong Yeol Yoo; Jong Uk Kwak; Kyung Ho Kim; Jin Jang

doi:10.1016/S1567-1739(02)00095-0

A p-channel SMC poly-Si thin film-transistor with a GOLDD structure

Yong Duck Son
, Kyu Sik Cho
, Seong Yeol Yoo
, Jong Uk Kwak
, Kyung Ho Kim
, Jin Jang

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We have developed a silicide-mediated crystallization (SMC) polycrystalline silicon (poly-Si) thin film transistor (TFT) with a gate overlapped lightly doped drain (GOLDD) structure. Applying a GOLDD structure to the SMC poly-Si TFT, the off-state leakage current of coplanar TFT is reduced, while the reduction of the on-state current is relatively small. The p-channel poly-Si TFT with a GOLDD structure exhibited a field effect mobility of 50 cm²/V s and an off-state leakage current of 3.8 × 10^-11 A/μm at the drain voltage of-5 V and the gate voltage of 10 V.

Original language	English
Pages (from-to)	269-272
Number of pages	4
Journal	Current Applied Physics
Volume	2
Issue number	4
DOIs	https://doi.org/10.1016/S1567-1739(02)00095-0
Publication status	Published - Aug 2002

Keywords

GOLDD
Leakage current
SMC polycrystaline TFT

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10.1016/S1567-1739(02)00095-0

Cite this

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title = "A p-channel SMC poly-Si thin film-transistor with a GOLDD structure",

abstract = "We have developed a silicide-mediated crystallization (SMC) polycrystalline silicon (poly-Si) thin film transistor (TFT) with a gate overlapped lightly doped drain (GOLDD) structure. Applying a GOLDD structure to the SMC poly-Si TFT, the off-state leakage current of coplanar TFT is reduced, while the reduction of the on-state current is relatively small. The p-channel poly-Si TFT with a GOLDD structure exhibited a field effect mobility of 50 cm2/V s and an off-state leakage current of 3.8 × 10-11 A/μm at the drain voltage of-5 V and the gate voltage of 10 V.",

keywords = "GOLDD, Leakage current, SMC polycrystaline TFT",

author = "Son, \{Yong Duck\} and \{Sik Cho\}, Kyu and \{Yeol Yoo\}, Seong and \{Uk Kwak\}, Jong and \{Ho Kim\}, Kyung and Jin Jang",

year = "2002",

month = aug,

doi = "10.1016/S1567-1739(02)00095-0",

language = "English",

volume = "2",

pages = "269--272",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier B.V.",

number = "4",

}

TY - JOUR

T1 - A p-channel SMC poly-Si thin film-transistor with a GOLDD structure

AU - Son, Yong Duck

AU - Sik Cho, Kyu

AU - Yeol Yoo, Seong

AU - Uk Kwak, Jong

AU - Ho Kim, Kyung

AU - Jang, Jin

PY - 2002/8

Y1 - 2002/8

N2 - We have developed a silicide-mediated crystallization (SMC) polycrystalline silicon (poly-Si) thin film transistor (TFT) with a gate overlapped lightly doped drain (GOLDD) structure. Applying a GOLDD structure to the SMC poly-Si TFT, the off-state leakage current of coplanar TFT is reduced, while the reduction of the on-state current is relatively small. The p-channel poly-Si TFT with a GOLDD structure exhibited a field effect mobility of 50 cm2/V s and an off-state leakage current of 3.8 × 10-11 A/μm at the drain voltage of-5 V and the gate voltage of 10 V.

AB - We have developed a silicide-mediated crystallization (SMC) polycrystalline silicon (poly-Si) thin film transistor (TFT) with a gate overlapped lightly doped drain (GOLDD) structure. Applying a GOLDD structure to the SMC poly-Si TFT, the off-state leakage current of coplanar TFT is reduced, while the reduction of the on-state current is relatively small. The p-channel poly-Si TFT with a GOLDD structure exhibited a field effect mobility of 50 cm2/V s and an off-state leakage current of 3.8 × 10-11 A/μm at the drain voltage of-5 V and the gate voltage of 10 V.

KW - GOLDD

KW - Leakage current

KW - SMC polycrystaline TFT

UR - https://www.scopus.com/pages/publications/0036698024

U2 - 10.1016/S1567-1739(02)00095-0

DO - 10.1016/S1567-1739(02)00095-0

M3 - Article

AN - SCOPUS:0036698024

SN - 1567-1739

VL - 2

SP - 269

EP - 272

JO - Current Applied Physics

JF - Current Applied Physics

IS - 4

ER -

A p-channel SMC poly-Si thin film-transistor with a GOLDD structure

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Keywords

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