Abstract
We propose the design concept for dramatically reducing the power consumption of integrated circuit using TFTs, which is named as Read-out Modulation (RoM). In the RoM scheme, the read-out voltages applied to the charge-trap memory TFTs are intentionally modulated to replace the clocks of shift registers to minimize the clocking power consumption. The test circuit is fabricated and the proposed RoM is successfully verified with the frequency characteristics.
Original language | English |
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Pages (from-to) | 528-531 |
Number of pages | 4 |
Journal | Digest of Technical Papers - SID International Symposium |
Volume | 49 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2018 |
Event | SID Symposium, Seminar, and Exhibition 2018, Display Week 2018 - Los Angeles, United States Duration: 20 May 2018 → 25 May 2018 |
Bibliographical note
Publisher Copyright:© 2018 SID.
Keywords
- Driving circuit
- Integration
- Low-power
- MTFTs