A Promising Strategy of Low-Power Circuit Design for Integrated Display Driver Using Charge-Trap Memory and Oxide Thin Film Transistors

Chun Won Byun, Yeo Myeong Kim, Byung Chang Yu, Jong Heon Yang, Chi Sun Hwang, So Jung Kim, Seung Hyuck Lee, Seung Woo Lee, Nam Sung Cho, Jeong Ik Lee, Sung Min Yoon

Research output: Contribution to journalConference articlepeer-review

Abstract

We propose the design concept for dramatically reducing the power consumption of integrated circuit using TFTs, which is named as Read-out Modulation (RoM). In the RoM scheme, the read-out voltages applied to the charge-trap memory TFTs are intentionally modulated to replace the clocks of shift registers to minimize the clocking power consumption. The test circuit is fabricated and the proposed RoM is successfully verified with the frequency characteristics.

Original languageEnglish
Pages (from-to)528-531
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume49
Issue number1
DOIs
Publication statusPublished - 2018
EventSID Symposium, Seminar, and Exhibition 2018, Display Week 2018 - Los Angeles, United States
Duration: 20 May 201825 May 2018

Bibliographical note

Publisher Copyright:
© 2018 SID.

Keywords

  • Driving circuit
  • Integration
  • Low-power
  • MTFTs

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