TY - GEN
T1 - A resistive switch device based on SbTeN chalcogenide film
AU - Park, Young Sam
AU - Lee, Seung Yun
AU - Yoon, Sung Min
AU - Jung, Soon Won
AU - Yu, Byoung Gon
PY - 2008
Y1 - 2008
N2 - To meet the needs of the next-generation programmable switch circuit, we propose a SbTeN-based resistive switch device, which unifies the functions of the pass transistor and the SRAM-cell, has non-volatility, and passes endurance specification. By adding an optimum nitrogen-content in a SbTe film, the on-resistance reduction is successfully demonstrated, which is considered to be the first solution to meet the needs for low-power consumption.
AB - To meet the needs of the next-generation programmable switch circuit, we propose a SbTeN-based resistive switch device, which unifies the functions of the pass transistor and the SRAM-cell, has non-volatility, and passes endurance specification. By adding an optimum nitrogen-content in a SbTe film, the on-resistance reduction is successfully demonstrated, which is considered to be the first solution to meet the needs for low-power consumption.
UR - https://www.scopus.com/pages/publications/77949971378
U2 - 10.1109/SNW.2008.5418418
DO - 10.1109/SNW.2008.5418418
M3 - Conference contribution
AN - SCOPUS:77949971378
SN - 9781424420711
T3 - IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008
BT - IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008
T2 - IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008
Y2 - 15 June 2008 through 16 June 2008
ER -