A selective growth of III-nitride by MOCVD for a buried-ridge type structure

Min Yang; Meoungwhan Cho; Chinkyo Kim; Jaehyung Yi; Jina Jeon; Sungwon Khym; Minhong Kim; Yoonho Choi; Shi Jong Leem; Yong Hee Lee

doi:10.1016/S0022-0248(01)01021-1

A selective growth of III-nitride by MOCVD for a buried-ridge type structure

Min Yang, Meoungwhan Cho, Chinkyo Kim, Jaehyung Yi, Jina Jeon, Sungwon Khym, Minhong Kim, Yoonho Choi, Shi Jong Leem, Yong Hee Lee

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We report a novel structure of a selectively grown buried-ridge (SGBR) type nitride-based laser diode structure grown on sapphire and lateral epitaxial overgrowth (LEO) substrates by metal-organic chemical vapor deposition (MOCVD). The AlGaN layers were designed for current confinement into ridge as well as to enhance lateral optical confinement by introducing an index difference between MQW and AlGaN layers in the lateral direction. The I-V characteristics of SGBR structure on LEO substrate showed no leakage current upto a reverse bias of -10V. From an EL image through transparent metal, we demonstrated that the current path was well defined into the ridge region.

Original language	English
Pages (from-to)	73-78
Number of pages	6
Journal	Journal of Crystal Growth
Volume	226
Issue number	1
DOIs	https://doi.org/10.1016/S0022-0248(01)01021-1
Publication status	Published - Jun 2001

Keywords

A3. Metalorganic chemical vapor deposition
A3. Selective epitaxy
B1. Nitrides
B3. Laser diodes

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10.1016/S0022-0248(01)01021-1

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title = "A selective growth of III-nitride by MOCVD for a buried-ridge type structure",

abstract = "We report a novel structure of a selectively grown buried-ridge (SGBR) type nitride-based laser diode structure grown on sapphire and lateral epitaxial overgrowth (LEO) substrates by metal-organic chemical vapor deposition (MOCVD). The AlGaN layers were designed for current confinement into ridge as well as to enhance lateral optical confinement by introducing an index difference between MQW and AlGaN layers in the lateral direction. The I-V characteristics of SGBR structure on LEO substrate showed no leakage current upto a reverse bias of -10V. From an EL image through transparent metal, we demonstrated that the current path was well defined into the ridge region.",

keywords = "A3. Metalorganic chemical vapor deposition, A3. Selective epitaxy, B1. Nitrides, B3. Laser diodes",

author = "Min Yang and Meoungwhan Cho and Chinkyo Kim and Jaehyung Yi and Jina Jeon and Sungwon Khym and Minhong Kim and Yoonho Choi and Leem, {Shi Jong} and Lee, {Yong Hee}",

year = "2001",

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doi = "10.1016/S0022-0248(01)01021-1",

language = "English",

volume = "226",

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journal = "Journal of Crystal Growth",

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T1 - A selective growth of III-nitride by MOCVD for a buried-ridge type structure

AU - Yang, Min

AU - Cho, Meoungwhan

AU - Kim, Chinkyo

AU - Yi, Jaehyung

AU - Jeon, Jina

AU - Khym, Sungwon

AU - Kim, Minhong

AU - Choi, Yoonho

AU - Leem, Shi Jong

AU - Lee, Yong Hee

PY - 2001/6

Y1 - 2001/6

N2 - We report a novel structure of a selectively grown buried-ridge (SGBR) type nitride-based laser diode structure grown on sapphire and lateral epitaxial overgrowth (LEO) substrates by metal-organic chemical vapor deposition (MOCVD). The AlGaN layers were designed for current confinement into ridge as well as to enhance lateral optical confinement by introducing an index difference between MQW and AlGaN layers in the lateral direction. The I-V characteristics of SGBR structure on LEO substrate showed no leakage current upto a reverse bias of -10V. From an EL image through transparent metal, we demonstrated that the current path was well defined into the ridge region.

AB - We report a novel structure of a selectively grown buried-ridge (SGBR) type nitride-based laser diode structure grown on sapphire and lateral epitaxial overgrowth (LEO) substrates by metal-organic chemical vapor deposition (MOCVD). The AlGaN layers were designed for current confinement into ridge as well as to enhance lateral optical confinement by introducing an index difference between MQW and AlGaN layers in the lateral direction. The I-V characteristics of SGBR structure on LEO substrate showed no leakage current upto a reverse bias of -10V. From an EL image through transparent metal, we demonstrated that the current path was well defined into the ridge region.

KW - A3. Metalorganic chemical vapor deposition

KW - A3. Selective epitaxy

KW - B1. Nitrides

KW - B3. Laser diodes

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U2 - 10.1016/S0022-0248(01)01021-1

DO - 10.1016/S0022-0248(01)01021-1

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AN - SCOPUS:0035368655

SN - 0022-0248

VL - 226

SP - 73

EP - 78

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -

A selective growth of III-nitride by MOCVD for a buried-ridge type structure

Abstract

Keywords

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