@inproceedings{617fe476bc5747d6944bca7397ae7371,
title = "A study on the resistive switching of La0.7Sr0.3MnO3 film using spectromicroscopy",
abstract = "Resistive random access memory (ReRAM) is a promising candidate for next generation nonvolatile memory. La0. 7Sr0. 3. MnO3 (LSMO) of perovskite manganite family has a great deal of attention for ReRAM material because it makes resistive switching (RS) of interface type without a {"}forming process{"}. However, the full understanding of the electronic structure and RS mechanism of LSMO remains a challenging problem. Therefore, this study performed spectromicroscopic analysis to understand the relation between the change of electronic structure and RS characteristic. The results demonstrated the electron occupation by field-induced oxygen vacancies and strong correlation effects.",
keywords = "LSMO, Perovskite manganite, ReRAM, Resistive switching",
author = "Lee, \{Hong Sub\} and Kang, \{Kyung Mun\} and Han, \{Woo Je\} and Lee, \{Tae Won\} and Park, \{Chang Sun\} and Choi, \{Yong June\} and Park, \{Hyung Ho\}",
year = "2014",
doi = "10.4028/www.scientific.net/AMM.597.184",
language = "English",
isbn = "9783038351771",
series = "Applied Mechanics and Materials",
publisher = "Trans Tech Publications Ltd",
pages = "184--187",
booktitle = "Advance Materials Development and Applied Mechanics",
note = "3rd International Conference on Advanced Materials Design and Mechanics, ICAMDM 2014 ; Conference date: 23-05-2014 Through 24-05-2014",
}