A surface flattening mechanism of a heteroepitaxial film consisting of faceted non-flat top twins: [11̄0 3̄] -oriented GaN films grown on m-plane sapphire substrates

Miyeon Jue; Hansub Yoon; Hyemi Lee; Sanghwa Lee; Chinkyo Kim

doi:10.1063/1.4867705

A surface flattening mechanism of a heteroepitaxial film consisting of faceted non-flat top twins: [11̄0 3̄] -oriented GaN films grown on m-plane sapphire substrates

Miyeon Jue, Hansub Yoon, Hyemi Lee, Sanghwa Lee, Chinkyo Kim

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We carried out experiments and computational simulations in order to answer a yet unanswered question about a surface flattening mechanism of a [11̄03̄]-oriented GaN film consisting of faceted non-flat top twins. Our results revealed that an overgrowth of one variant of twins over the other, which was manifested only at a thickness larger than a few microns due to a slight asymmetric crystallographic tilt (1.0 ± 0.4) of twins, played a key role in a surface flattening mechanism. In addition, we experimentally demonstrated that GaN grown on a SiO₂-patterned m-plane sapphire substrate had no asymmetric tilt and that no surface flattening occurred.

Original language	English
Article number	092110
Journal	Applied Physics Letters
Volume	104
Issue number	9
DOIs	https://doi.org/10.1063/1.4867705
Publication status	Published - 3 Mar 2014

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A surface flattening mechanism of a heteroepitaxial film consisting of faceted non-flat top twins: [11̄0 3̄] -oriented GaN films grown on m-plane sapphire substrates

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