Abstract
The purpose of this study to develop debris free extreme Ultraviolet (EUV) light source technology for producing next-generation semiconductor devices, offering enhanced resolution and precision. Key feature of this study will be to create efficient EUV radiation with reduced visible light effects and debris free source. This study introduces a novel solution using cold cathode electron beam (C-beam) irradiation to tackle this issue as our approach includes the utilization of mirrors for optimal EUV light reflection, and filters for selective attenuation of visible and UV-A/B/C wavelength and use debris block for debris free EUV source.
| Original language | English |
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| Title of host publication | 2024 37th International Vacuum Nanoelectronics Conference, IVNC 2024 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9798350379754 |
| DOIs | |
| Publication status | Published - 2024 |
| Event | 37th International Vacuum Nanoelectronics Conference, IVNC 2024 - Brno, Czech Republic Duration: 15 Jul 2024 → 19 Jul 2024 |
Publication series
| Name | 2024 37th International Vacuum Nanoelectronics Conference, IVNC 2024 |
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Conference
| Conference | 37th International Vacuum Nanoelectronics Conference, IVNC 2024 |
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| Country/Territory | Czech Republic |
| City | Brno |
| Period | 15/07/24 → 19/07/24 |
Bibliographical note
Publisher Copyright:© 2024 IEEE.
Keywords
- Cold Cathode electron beam (C-beam)
- Extreme ultraviolet (EUV)
- Photodiode (PD) (SXUV100, OPTODIODE)
- Plasma enhanced chemical vapor deposition (PECVD)
- Vertically Aligned Carbon Nano Tube (VACNT)