AES STUDY OF SURFACES PRODUCED BY SELECTIVE DISSOLUTION IN Al-Cu ALLOYS.

This study examined underfilm and total copper enrichment as functions of potential and alloy content. High-purity binary alloys containing 0. 06% to 2. 0% Cu were exposed to 2. 4M H//2SO//4 after mechanical polishing. They were examined in a PE 545 Auger unit and depth profiles made while sputtering with 0. 5 kev Xe** plus . Sensitivity and sputtering rate calibrations were made. Significant preferential sputtering was not observed. The mixing effect of ion bombardment had to be taken into account when interpreting depth profiles.