Al-Zn-Sn-O thin film transistors with top and bottom gate structure for AMOLED

Doo Hee Cho; Sang Hee Ko Park; Shinhyuk Yang; Chunwon Byun; Sung Mook Chung; Woo Seok Cheong; Jaeheon Shin; Min Ki Ryu; Jeong Ik Lee; Chi Sun Hwang; Sung Min Yoon; Hye Yong Chu; Kyoung Ik Cho

Al-Zn-Sn-O thin film transistors with top and bottom gate structure for AMOLED

Doo Hee Cho
, Sang Hee Ko Park
, Shinhyuk Yang
, Chunwon Byun
, Sung Mook Chung
, Woo Seok Cheong
, Jaeheon Shin
, Min Ki Ryu
, Jeong Ik Lee
, Chi Sun Hwang
, Sung Min Yoon
, Hye Yong Chu
, Kyoung Ik Cho

Research output: Contribution to conference › Paper › peer-review

Abstract

We have fabricated the transparent bottom gate and top gate TFTs using new oxide material of Al-Zn-Sn-O (AZTO) as an active layer. The AZTO active layer was deposited by RF magnetron sputtering at room temperature. Our novel TFT showed good TFT performance without post-annealing. The field effect mobility and the sub-threshold swing were improved by the post-annealing, and the mobility increased with SnO₂ content. The AZTO TFT (about 4 mol% AlOx, 66 mol% ZnO, and 30 mol% SnO₂) exhibited a mobility of 10.1 cm²/Vs, a turn-on voltage of 0.4 V, a sub-threshold swing of 0.6 V/dec, and an on/off ratio of 10⁹. Though the bottom gate AZTO TFT showed good electrical performance, the bias stability was relatively poor. The bias stability was significantly improved in the top gate AZTO TFT.

Original language	English
Pages	1625-1628
Number of pages	4
Publication status	Published - 2008
Event	15th International Display Workshops, IDW '08 - Niigata, Japan Duration: 3 Dec 2008 → 5 Dec 2008

Conference

Conference	15th International Display Workshops, IDW '08
Country/Territory	Japan
City	Niigata
Period	3/12/08 → 5/12/08

Cite this

@conference{e7b9ac0d553c420197642c938e68c4d4,

title = "Al-Zn-Sn-O thin film transistors with top and bottom gate structure for AMOLED",

abstract = "We have fabricated the transparent bottom gate and top gate TFTs using new oxide material of Al-Zn-Sn-O (AZTO) as an active layer. The AZTO active layer was deposited by RF magnetron sputtering at room temperature. Our novel TFT showed good TFT performance without post-annealing. The field effect mobility and the sub-threshold swing were improved by the post-annealing, and the mobility increased with SnO2 content. The AZTO TFT (about 4 mol\% AlOx, 66 mol\% ZnO, and 30 mol\% SnO2) exhibited a mobility of 10.1 cm2/Vs, a turn-on voltage of 0.4 V, a sub-threshold swing of 0.6 V/dec, and an on/off ratio of 109. Though the bottom gate AZTO TFT showed good electrical performance, the bias stability was relatively poor. The bias stability was significantly improved in the top gate AZTO TFT.",

author = "Cho, \{Doo Hee\} and \{Ko Park\}, \{Sang Hee\} and Shinhyuk Yang and Chunwon Byun and Chung, \{Sung Mook\} and Cheong, \{Woo Seok\} and Jaeheon Shin and Ryu, \{Min Ki\} and Lee, \{Jeong Ik\} and Hwang, \{Chi Sun\} and Yoon, \{Sung Min\} and Chu, \{Hye Yong\} and Cho, \{Kyoung Ik\}",

year = "2008",

language = "English",

pages = "1625--1628",

}

TY - CONF

T1 - Al-Zn-Sn-O thin film transistors with top and bottom gate structure for AMOLED

AU - Cho, Doo Hee

AU - Ko Park, Sang Hee

AU - Yang, Shinhyuk

AU - Byun, Chunwon

AU - Chung, Sung Mook

AU - Cheong, Woo Seok

AU - Shin, Jaeheon

AU - Ryu, Min Ki

AU - Lee, Jeong Ik

AU - Hwang, Chi Sun

AU - Yoon, Sung Min

AU - Chu, Hye Yong

AU - Cho, Kyoung Ik

PY - 2008

Y1 - 2008

N2 - We have fabricated the transparent bottom gate and top gate TFTs using new oxide material of Al-Zn-Sn-O (AZTO) as an active layer. The AZTO active layer was deposited by RF magnetron sputtering at room temperature. Our novel TFT showed good TFT performance without post-annealing. The field effect mobility and the sub-threshold swing were improved by the post-annealing, and the mobility increased with SnO2 content. The AZTO TFT (about 4 mol% AlOx, 66 mol% ZnO, and 30 mol% SnO2) exhibited a mobility of 10.1 cm2/Vs, a turn-on voltage of 0.4 V, a sub-threshold swing of 0.6 V/dec, and an on/off ratio of 109. Though the bottom gate AZTO TFT showed good electrical performance, the bias stability was relatively poor. The bias stability was significantly improved in the top gate AZTO TFT.

AB - We have fabricated the transparent bottom gate and top gate TFTs using new oxide material of Al-Zn-Sn-O (AZTO) as an active layer. The AZTO active layer was deposited by RF magnetron sputtering at room temperature. Our novel TFT showed good TFT performance without post-annealing. The field effect mobility and the sub-threshold swing were improved by the post-annealing, and the mobility increased with SnO2 content. The AZTO TFT (about 4 mol% AlOx, 66 mol% ZnO, and 30 mol% SnO2) exhibited a mobility of 10.1 cm2/Vs, a turn-on voltage of 0.4 V, a sub-threshold swing of 0.6 V/dec, and an on/off ratio of 109. Though the bottom gate AZTO TFT showed good electrical performance, the bias stability was relatively poor. The bias stability was significantly improved in the top gate AZTO TFT.

UR - https://www.scopus.com/pages/publications/77954098194

M3 - Paper

AN - SCOPUS:77954098194

SP - 1625

EP - 1628

T2 - 15th International Display Workshops, IDW '08

Y2 - 3 December 2008 through 5 December 2008

ER -

Al-Zn-Sn-O thin film transistors with top and bottom gate structure for AMOLED

Abstract

Conference

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