AlGaN/InGaN HEMTs for RF current collapse suppression

W. Lanford; V. Kumar; R. Schwindt; A. Kuliev; I. Adesida; A. M. Dabiran; A. M. Wowchak; P. P. Chow; J. W. Lee

doi:10.1049/el:20040398

AlGaN/InGaN HEMTs for RF current collapse suppression

W. Lanford
, V. Kumar
, R. Schwindt
, A. Kuliev
, I. Adesida
, A. M. Dabiran
, A. M. Wowchak
, P. P. Chow
, J. W. Lee

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

A report is made on the DC, RF and large-signal pulsed characteristics of unpassivated AlGaN/InGaN/GaN high electron-mobility transistors (HEMTs) grown by molecular beam epitaxy on sapphire substrates. The devices with a 0.5 μm gate-length exhibited relatively flat transconductance (g_m) with a maximum drain current of 880 mA/mm, a peak g_m of 156 mS/mm, an f _T of 17.3 GHz, and an f_MAX of 28.7 GHz. In addition to promising DC and RF results, pulsed I-V measurements reveal that there is little current collapse in the AlGaN/InGaN HEMTs. These results indicate that the output power of InGaN channel HEMTs should not be limited by surface-state-related current collapse.

Original language	English
Pages (from-to)	771-772
Number of pages	2
Journal	Electronics Letters
Volume	40
Issue number	12
DOIs	https://doi.org/10.1049/el:20040398
Publication status	Published - 10 Jun 2004

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10.1049/el:20040398

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title = "AlGaN/InGaN HEMTs for RF current collapse suppression",

abstract = "A report is made on the DC, RF and large-signal pulsed characteristics of unpassivated AlGaN/InGaN/GaN high electron-mobility transistors (HEMTs) grown by molecular beam epitaxy on sapphire substrates. The devices with a 0.5 μm gate-length exhibited relatively flat transconductance (gm) with a maximum drain current of 880 mA/mm, a peak gm of 156 mS/mm, an f T of 17.3 GHz, and an fMAX of 28.7 GHz. In addition to promising DC and RF results, pulsed I-V measurements reveal that there is little current collapse in the AlGaN/InGaN HEMTs. These results indicate that the output power of InGaN channel HEMTs should not be limited by surface-state-related current collapse.",

author = "W. Lanford and V. Kumar and R. Schwindt and A. Kuliev and I. Adesida and Dabiran, \{A. M.\} and Wowchak, \{A. M.\} and Chow, \{P. P.\} and Lee, \{J. W.\}",

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doi = "10.1049/el:20040398",

language = "English",

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pages = "771--772",

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TY - JOUR

T1 - AlGaN/InGaN HEMTs for RF current collapse suppression

AU - Lanford, W.

AU - Kumar, V.

AU - Schwindt, R.

AU - Kuliev, A.

AU - Adesida, I.

AU - Dabiran, A. M.

AU - Wowchak, A. M.

AU - Chow, P. P.

AU - Lee, J. W.

PY - 2004/6/10

Y1 - 2004/6/10

N2 - A report is made on the DC, RF and large-signal pulsed characteristics of unpassivated AlGaN/InGaN/GaN high electron-mobility transistors (HEMTs) grown by molecular beam epitaxy on sapphire substrates. The devices with a 0.5 μm gate-length exhibited relatively flat transconductance (gm) with a maximum drain current of 880 mA/mm, a peak gm of 156 mS/mm, an f T of 17.3 GHz, and an fMAX of 28.7 GHz. In addition to promising DC and RF results, pulsed I-V measurements reveal that there is little current collapse in the AlGaN/InGaN HEMTs. These results indicate that the output power of InGaN channel HEMTs should not be limited by surface-state-related current collapse.

AB - A report is made on the DC, RF and large-signal pulsed characteristics of unpassivated AlGaN/InGaN/GaN high electron-mobility transistors (HEMTs) grown by molecular beam epitaxy on sapphire substrates. The devices with a 0.5 μm gate-length exhibited relatively flat transconductance (gm) with a maximum drain current of 880 mA/mm, a peak gm of 156 mS/mm, an f T of 17.3 GHz, and an fMAX of 28.7 GHz. In addition to promising DC and RF results, pulsed I-V measurements reveal that there is little current collapse in the AlGaN/InGaN HEMTs. These results indicate that the output power of InGaN channel HEMTs should not be limited by surface-state-related current collapse.

UR - https://www.scopus.com/pages/publications/3042638789

U2 - 10.1049/el:20040398

DO - 10.1049/el:20040398

M3 - Article

AN - SCOPUS:3042638789

SN - 0013-5194

VL - 40

SP - 771

EP - 772

JO - Electronics Letters

JF - Electronics Letters

IS - 12

ER -

AlGaN/InGaN HEMTs for RF current collapse suppression

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