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All solution processed charge generation junction for quantum-dot light emitting diodes

  • Eunsa Hwang
  • , Hyo Min Kim
  • , Jeonggi Kim
  • , Jin Jang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Citation (Scopus)

Abstract

In this study, all-solution processed inverted yellow-emitting tandem quantum-dot light emitting diodes (QLEDs) are suggested. The solution processed p-n junctions are used to generate charges between bottom and top cells of tandem QLEDs. The tandem QLEDs with triple charge generation junctions by solutbn processing is fabricated for low-cost QLED manufacturing.

Original languageEnglish
Title of host publication23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
PublisherSociety for Information Display
Pages421-424
Number of pages4
ISBN (Electronic)9781510845510
Publication statusPublished - 2016
Event23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 - Fukuoka, Japan
Duration: 7 Dec 20169 Dec 2016

Publication series

Name23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
Volume1

Conference

Conference23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
Country/TerritoryJapan
CityFukuoka
Period7/12/169/12/16

Bibliographical note

Funding Information:
This work was supported by the Human Resources Development program (Grant no. 20134010200490) of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government Ministry of Trade, Industry and Energy.

Keywords

  • All solution process
  • Charge generation junction
  • QLEDs
  • Quantum-dot
  • Tandem structure

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