AMOLED using CW laser crystallized polycrystalline silicon thin-film transistor

Yong Duck Son; Kyung Dong Yang; Nam Kil Son; Seong Man Hong; Kyu Chang Park; Dong Joon Choo; Jin Jang; Woo Jin Nam; Jae Hoon Lee; Min Koo Han; Myung Hwan Oh

AMOLED using CW laser crystallized polycrystalline silicon thin-film transistor

Yong Duck Son
, Kyung Dong Yang
, Nam Kil Son
, Seong Man Hong
, Kyu Chang Park
, Dong Joon Choo
, Jin Jang
, Woo Jin Nam
, Jae Hoon Lee
, Min Koo Han
, Myung Hwan Oh

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have developed a 2.2-inch QQVGA AMOLED display using CW laser crystallized (CLC) poly-Si backplane. By using CW laser, the a-Si on glass could be crystallized into one dimensional single crystalline silicon as a result of sequential lateral crystallization (SLC) region. The SLC region was used as an active layer of AMOLED backplane. The p-channel poly-Si TFT on SLC region exhibited the field-effect mobility of 173 cm²/Vs, gate voltage swing of 0.5 V/dec. and threshold voltage of-4.1 V. The brightness uniformity of AMOLEDs with and without compensation circuits have been compared.

Original language	English
Pages (from-to)	1247-1250
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	37
Issue number	3
Publication status	Published - 2006
Event	44th International Symposium, Seminar, and Exhibition, SID 2006 - San Francisco, CA, United States Duration: 4 Jun 2006 → 9 Jun 2006

Cite this

@article{1fc02392b109454a91de89faff9eea07,

title = "AMOLED using CW laser crystallized polycrystalline silicon thin-film transistor",

abstract = "We have developed a 2.2-inch QQVGA AMOLED display using CW laser crystallized (CLC) poly-Si backplane. By using CW laser, the a-Si on glass could be crystallized into one dimensional single crystalline silicon as a result of sequential lateral crystallization (SLC) region. The SLC region was used as an active layer of AMOLED backplane. The p-channel poly-Si TFT on SLC region exhibited the field-effect mobility of 173 cm2/Vs, gate voltage swing of 0.5 V/dec. and threshold voltage of-4.1 V. The brightness uniformity of AMOLEDs with and without compensation circuits have been compared.",

author = "Son, \{Yong Duck\} and Yang, \{Kyung Dong\} and Son, \{Nam Kil\} and Hong, \{Seong Man\} and Park, \{Kyu Chang\} and Choo, \{Dong Joon\} and Jin Jang and Nam, \{Woo Jin\} and Lee, \{Jae Hoon\} and Han, \{Min Koo\} and Oh, \{Myung Hwan\}",

year = "2006",

language = "English",

volume = "37",

pages = "1247--1250",

journal = "Digest of Technical Papers - SID International Symposium",

issn = "0097-966X",

publisher = "John Wiley and Sons Inc.",

number = "3",

note = "44th International Symposium, Seminar, and Exhibition, SID 2006 ; Conference date: 04-06-2006 Through 09-06-2006",

}

TY - JOUR

T1 - AMOLED using CW laser crystallized polycrystalline silicon thin-film transistor

AU - Son, Yong Duck

AU - Yang, Kyung Dong

AU - Son, Nam Kil

AU - Hong, Seong Man

AU - Park, Kyu Chang

AU - Choo, Dong Joon

AU - Jang, Jin

AU - Nam, Woo Jin

AU - Lee, Jae Hoon

AU - Han, Min Koo

AU - Oh, Myung Hwan

PY - 2006

Y1 - 2006

N2 - We have developed a 2.2-inch QQVGA AMOLED display using CW laser crystallized (CLC) poly-Si backplane. By using CW laser, the a-Si on glass could be crystallized into one dimensional single crystalline silicon as a result of sequential lateral crystallization (SLC) region. The SLC region was used as an active layer of AMOLED backplane. The p-channel poly-Si TFT on SLC region exhibited the field-effect mobility of 173 cm2/Vs, gate voltage swing of 0.5 V/dec. and threshold voltage of-4.1 V. The brightness uniformity of AMOLEDs with and without compensation circuits have been compared.

AB - We have developed a 2.2-inch QQVGA AMOLED display using CW laser crystallized (CLC) poly-Si backplane. By using CW laser, the a-Si on glass could be crystallized into one dimensional single crystalline silicon as a result of sequential lateral crystallization (SLC) region. The SLC region was used as an active layer of AMOLED backplane. The p-channel poly-Si TFT on SLC region exhibited the field-effect mobility of 173 cm2/Vs, gate voltage swing of 0.5 V/dec. and threshold voltage of-4.1 V. The brightness uniformity of AMOLEDs with and without compensation circuits have been compared.

UR - https://www.scopus.com/pages/publications/34547601809

M3 - Conference article

AN - SCOPUS:34547601809

SN - 0097-966X

VL - 37

SP - 1247

EP - 1250

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 3

T2 - 44th International Symposium, Seminar, and Exhibition, SID 2006

Y2 - 4 June 2006 through 9 June 2006

ER -

AMOLED using CW laser crystallized polycrystalline silicon thin-film transistor

Abstract

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