Amorphous silicon thin-film transistors made by microimprint lithography

Jung Su Choi; Byoung Kwon Choo; Na Young Song; Se Hwan Kim; Kyu Chang Park; Jin Jang

Amorphous silicon thin-film transistors made by microimprint lithography

Jung Su Choi, Byoung Kwon Choo, Na Young Song, Se Hwan Kim, Kyu Chang Park, Jin Jang

Research output: Contribution to conference › Paper › peer-review

Abstract

We made hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFTs) using an ultra violet micro imprint lithography (UV-MIL). UV-MIL a-Si.H TFTs exhibited a field-effect mobility of 1.2 cm²/V·s, threshold voltage of 1.9 V and on/off current ratio of 10⁸. We investigated threshold voltage shift (ΔV_th) of UV-MIL a-Si:H TFTs induced by gate bias stress and bias temperature stress (BTS). We confirmed that UV-MIL a-Si:H TFTs have electrical and thermal stability for application to long term active-matrix liquid-crystal display (AMLCD).

Original language	English
Pages	691-694
Number of pages	4
Publication status	Published - 2006
Event	13th International Display Workshops, IDW '06 - Otsu, Japan Duration: 6 Dec 2006 → 6 Dec 2006

Conference

Conference	13th International Display Workshops, IDW '06
Country/Territory	Japan
City	Otsu
Period	6/12/06 → 6/12/06

Cite this

@conference{14125c8f4146447dad7c68767ce7e0d0,

title = "Amorphous silicon thin-film transistors made by microimprint lithography",

abstract = "We made hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFTs) using an ultra violet micro imprint lithography (UV-MIL). UV-MIL a-Si.H TFTs exhibited a field-effect mobility of 1.2 cm2/V·s, threshold voltage of 1.9 V and on/off current ratio of 108. We investigated threshold voltage shift (ΔVth) of UV-MIL a-Si:H TFTs induced by gate bias stress and bias temperature stress (BTS). We confirmed that UV-MIL a-Si:H TFTs have electrical and thermal stability for application to long term active-matrix liquid-crystal display (AMLCD).",

author = "Choi, {Jung Su} and Choo, {Byoung Kwon} and Song, {Na Young} and Kim, {Se Hwan} and Park, {Kyu Chang} and Jin Jang",

year = "2006",

language = "English",

pages = "691--694",

}

TY - CONF

T1 - Amorphous silicon thin-film transistors made by microimprint lithography

AU - Choi, Jung Su

AU - Choo, Byoung Kwon

AU - Song, Na Young

AU - Kim, Se Hwan

AU - Park, Kyu Chang

AU - Jang, Jin

PY - 2006

Y1 - 2006

N2 - We made hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFTs) using an ultra violet micro imprint lithography (UV-MIL). UV-MIL a-Si.H TFTs exhibited a field-effect mobility of 1.2 cm2/V·s, threshold voltage of 1.9 V and on/off current ratio of 108. We investigated threshold voltage shift (ΔVth) of UV-MIL a-Si:H TFTs induced by gate bias stress and bias temperature stress (BTS). We confirmed that UV-MIL a-Si:H TFTs have electrical and thermal stability for application to long term active-matrix liquid-crystal display (AMLCD).

AB - We made hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFTs) using an ultra violet micro imprint lithography (UV-MIL). UV-MIL a-Si.H TFTs exhibited a field-effect mobility of 1.2 cm2/V·s, threshold voltage of 1.9 V and on/off current ratio of 108. We investigated threshold voltage shift (ΔVth) of UV-MIL a-Si:H TFTs induced by gate bias stress and bias temperature stress (BTS). We confirmed that UV-MIL a-Si:H TFTs have electrical and thermal stability for application to long term active-matrix liquid-crystal display (AMLCD).

UR - http://www.scopus.com/inward/record.url?scp=57649221362&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:57649221362

SP - 691

EP - 694

T2 - 13th International Display Workshops, IDW '06

Y2 - 6 December 2006 through 6 December 2006

ER -

Amorphous silicon thin-film transistors made by microimprint lithography

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