Abstract
A highly disordered GaN nanostructure was grown by using hydride vapor phase epitaxy on an Si(100) substrate, and its diffuse reflectivity was measured in the 200-1200 nm spectral range by using an integrating sphere. A modified multiple-scattering-based model successfully explained the spectral distribution of diffuse reflectivity of this highly disordered GaN nanostructure.
| Original language | English |
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| Pages (from-to) | 611-613 |
| Number of pages | 3 |
| Journal | Optics Letters |
| Volume | 37 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 15 Feb 2012 |