Analysis of surface roughness of critical-dimension structures using spectroscopic ellipsometry

T. H. Ghong; S. H. Han; J. M. Chung; J. S. Byun; D. E. Aspnes; Y. D. Kim

doi:10.1063/1.3666489

Analysis of surface roughness of critical-dimension structures using spectroscopic ellipsometry

T. H. Ghong, S. H. Han, J. M. Chung, J. S. Byun, D. E. Aspnes, Y. D. Kim

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

As critical dimension of integrated-circuits shrink to 100 nm and below, observation of critical dimension roughness will become increasingly important. In this article, we analyze roughness of grating structure that fabricated on a Si wafer using standard photolithography, and characterize roughness of CD by rigorous coupled-wave analysis and effective medium approximation method with spectroscopic ellipsometry.

Original language	English
Title of host publication	Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
Pages	533-534
Number of pages	2
DOIs	https://doi.org/10.1063/1.3666489
Publication status	Published - 2011
Event	30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of Duration: 25 Jul 2010 → 30 Jul 2010

Publication series

Name	AIP Conference Proceedings
Volume	1399
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	30th International Conference on the Physics of Semiconductors, ICPS-30
Country/Territory	Korea, Republic of
City	Seoul
Period	25/07/10 → 30/07/10

Keywords

RCWA
ellipsometry
roughness

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10.1063/1.3666489

Cite this

Ghong, T. H., Han, S. H., Chung, J. M., Byun, J. S., Aspnes, D. E., & Kim, Y. D. (2011). Analysis of surface roughness of critical-dimension structures using spectroscopic ellipsometry. In Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30 (pp. 533-534). (AIP Conference Proceedings; Vol. 1399). https://doi.org/10.1063/1.3666489

@inproceedings{a168f91d19be48ca8cd7d02554e419fa,

title = "Analysis of surface roughness of critical-dimension structures using spectroscopic ellipsometry",

abstract = "As critical dimension of integrated-circuits shrink to 100 nm and below, observation of critical dimension roughness will become increasingly important. In this article, we analyze roughness of grating structure that fabricated on a Si wafer using standard photolithography, and characterize roughness of CD by rigorous coupled-wave analysis and effective medium approximation method with spectroscopic ellipsometry.",

keywords = "RCWA, ellipsometry, roughness",

author = "Ghong, {T. H.} and Han, {S. H.} and Chung, {J. M.} and Byun, {J. S.} and Aspnes, {D. E.} and Kim, {Y. D.}",

year = "2011",

doi = "10.1063/1.3666489",

language = "English",

isbn = "9780735410022",

series = "AIP Conference Proceedings",

pages = "533--534",

booktitle = "Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30",

}

Ghong, TH, Han, SH, Chung, JM, Byun, JS, Aspnes, DE & Kim, YD 2011, Analysis of surface roughness of critical-dimension structures using spectroscopic ellipsometry. in Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30. AIP Conference Proceedings, vol. 1399, pp. 533-534, 30th International Conference on the Physics of Semiconductors, ICPS-30, Seoul, Korea, Republic of, 25/07/10. https://doi.org/10.1063/1.3666489

Analysis of surface roughness of critical-dimension structures using spectroscopic ellipsometry. / Ghong, T. H.; Han, S. H.; Chung, J. M. et al.
Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30. 2011. p. 533-534 (AIP Conference Proceedings; Vol. 1399).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Analysis of surface roughness of critical-dimension structures using spectroscopic ellipsometry

AU - Ghong, T. H.

AU - Han, S. H.

AU - Chung, J. M.

AU - Byun, J. S.

AU - Aspnes, D. E.

AU - Kim, Y. D.

PY - 2011

Y1 - 2011

N2 - As critical dimension of integrated-circuits shrink to 100 nm and below, observation of critical dimension roughness will become increasingly important. In this article, we analyze roughness of grating structure that fabricated on a Si wafer using standard photolithography, and characterize roughness of CD by rigorous coupled-wave analysis and effective medium approximation method with spectroscopic ellipsometry.

AB - As critical dimension of integrated-circuits shrink to 100 nm and below, observation of critical dimension roughness will become increasingly important. In this article, we analyze roughness of grating structure that fabricated on a Si wafer using standard photolithography, and characterize roughness of CD by rigorous coupled-wave analysis and effective medium approximation method with spectroscopic ellipsometry.

KW - RCWA

KW - ellipsometry

KW - roughness

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U2 - 10.1063/1.3666489

DO - 10.1063/1.3666489

M3 - Conference contribution

AN - SCOPUS:84862782623

SN - 9780735410022

T3 - AIP Conference Proceedings

SP - 533

EP - 534

BT - Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30

T2 - 30th International Conference on the Physics of Semiconductors, ICPS-30

Y2 - 25 July 2010 through 30 July 2010

ER -

Analysis of surface roughness of critical-dimension structures using spectroscopic ellipsometry

Abstract

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Keywords

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