Annealing temperature dependence of capacitance-voltage characteristics in Ge-nanocrystal-based nonvolatile memory structures

C. J. Park; H. Y. Cho; S. Kim; Suk Ho Choi; R. G. Elliman; J. H. Han; Chungwoo Kim; H. N. Hwang; C. C. Hwang

doi:10.1063/1.2168249

Annealing temperature dependence of capacitance-voltage characteristics in Ge-nanocrystal-based nonvolatile memory structures

C. J. Park, H. Y. Cho, S. Kim, Suk Ho Choi, R. G. Elliman, J. H. Han, Chungwoo Kim, H. N. Hwang, C. C. Hwang

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Abstract

The annealing temperature (T _A) dependence of capacitance-voltage (C-V) characteristics has been studied in metal-oxide-semiconductor structures containing Ge nanocrystals (NCs) produced by ion implantation and annealing. These structures are of interest for application as nonvolatile memory and T _A is shown to have a strong influence on the C-V hysteresis. This behavior is shown to be correlated with structural changes of the Ge NCs which have been characterized by synchrotron-radiation photoemission spectroscopy. Specifically, well-defined C-V characteristics with large hysteresis were found only for annealing temperatures greater than 950°C where Ge nanocrystals are known to form. In this temperature regime, transmission electron microcopy and energy dispersive x-ray spectroscopy demonstrate the existence of regularly arranged Ge NCs of approximately 3-5 nm diameter located around 6.7 nm from the interface.

Original language	English
Article number	036101
Journal	Journal of Applied Physics
Volume	99
Issue number	3
DOIs	https://doi.org/10.1063/1.2168249
Publication status	Published - 1 Feb 2006

Bibliographical note

Funding Information:
One of the authors (S.-H.C.) acknowledges the partial support from the National research program for the 0.1 Terabit Non-Volatile Memory Development sponsored by Korea Ministry of Science and Technology. Another author (H.Y.C.) also acknowledges partial supports from the Quantum-Functional Semiconductor Research Center in Dongguk University and the National Program for Tera level Nano Devices through MOST. Another author (R.G.E.) also acknowledges the Australian Research Council for their partial financial support of this research.

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title = "Annealing temperature dependence of capacitance-voltage characteristics in Ge-nanocrystal-based nonvolatile memory structures",

abstract = "The annealing temperature (T A) dependence of capacitance-voltage (C-V) characteristics has been studied in metal-oxide-semiconductor structures containing Ge nanocrystals (NCs) produced by ion implantation and annealing. These structures are of interest for application as nonvolatile memory and T A is shown to have a strong influence on the C-V hysteresis. This behavior is shown to be correlated with structural changes of the Ge NCs which have been characterized by synchrotron-radiation photoemission spectroscopy. Specifically, well-defined C-V characteristics with large hysteresis were found only for annealing temperatures greater than 950°C where Ge nanocrystals are known to form. In this temperature regime, transmission electron microcopy and energy dispersive x-ray spectroscopy demonstrate the existence of regularly arranged Ge NCs of approximately 3-5 nm diameter located around 6.7 nm from the interface.",

author = "Park, {C. J.} and Cho, {H. Y.} and S. Kim and Choi, {Suk Ho} and Elliman, {R. G.} and Han, {J. H.} and Chungwoo Kim and Hwang, {H. N.} and Hwang, {C. C.}",

note = "Funding Information: One of the authors (S.-H.C.) acknowledges the partial support from the National research program for the 0.1 Terabit Non-Volatile Memory Development sponsored by Korea Ministry of Science and Technology. Another author (H.Y.C.) also acknowledges partial supports from the Quantum-Functional Semiconductor Research Center in Dongguk University and the National Program for Tera level Nano Devices through MOST. Another author (R.G.E.) also acknowledges the Australian Research Council for their partial financial support of this research.",

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AU - Park, C. J.

AU - Cho, H. Y.

AU - Kim, S.

AU - Choi, Suk Ho

AU - Elliman, R. G.

AU - Han, J. H.

AU - Kim, Chungwoo

AU - Hwang, H. N.

AU - Hwang, C. C.

N1 - Funding Information: One of the authors (S.-H.C.) acknowledges the partial support from the National research program for the 0.1 Terabit Non-Volatile Memory Development sponsored by Korea Ministry of Science and Technology. Another author (H.Y.C.) also acknowledges partial supports from the Quantum-Functional Semiconductor Research Center in Dongguk University and the National Program for Tera level Nano Devices through MOST. Another author (R.G.E.) also acknowledges the Australian Research Council for their partial financial support of this research.

PY - 2006/2/1

Y1 - 2006/2/1

N2 - The annealing temperature (T A) dependence of capacitance-voltage (C-V) characteristics has been studied in metal-oxide-semiconductor structures containing Ge nanocrystals (NCs) produced by ion implantation and annealing. These structures are of interest for application as nonvolatile memory and T A is shown to have a strong influence on the C-V hysteresis. This behavior is shown to be correlated with structural changes of the Ge NCs which have been characterized by synchrotron-radiation photoemission spectroscopy. Specifically, well-defined C-V characteristics with large hysteresis were found only for annealing temperatures greater than 950°C where Ge nanocrystals are known to form. In this temperature regime, transmission electron microcopy and energy dispersive x-ray spectroscopy demonstrate the existence of regularly arranged Ge NCs of approximately 3-5 nm diameter located around 6.7 nm from the interface.

AB - The annealing temperature (T A) dependence of capacitance-voltage (C-V) characteristics has been studied in metal-oxide-semiconductor structures containing Ge nanocrystals (NCs) produced by ion implantation and annealing. These structures are of interest for application as nonvolatile memory and T A is shown to have a strong influence on the C-V hysteresis. This behavior is shown to be correlated with structural changes of the Ge NCs which have been characterized by synchrotron-radiation photoemission spectroscopy. Specifically, well-defined C-V characteristics with large hysteresis were found only for annealing temperatures greater than 950°C where Ge nanocrystals are known to form. In this temperature regime, transmission electron microcopy and energy dispersive x-ray spectroscopy demonstrate the existence of regularly arranged Ge NCs of approximately 3-5 nm diameter located around 6.7 nm from the interface.

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Annealing temperature dependence of capacitance-voltage characteristics in Ge-nanocrystal-based nonvolatile memory structures

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