Anomalous increased drain current characteristics of a-Si:H TFTs with long channel width

Sung Hun Jin; Mun Soo Park; Jeong Il Kim; Dong Gyu Kim; Nam Deog Kim

doi:10.1889/1.2785281

Anomalous increased drain current characteristics of a-Si:H TFTs with long channel width

Sung Hun Jin
, Mun Soo Park
, Jeong Il Kim
, Dong Gyu Kim
, Nam Deog Kim

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

A-Si: H TFTs having channel widths ranging from 40 μm to 48,000 μm were successfully fabricated and investigated for characterization of electrical dependence on channel width. TFTs with a critical channel width larger than 10,000 μm show width-normalized drain current increases significantly even at the low lateral electrical field of 1.9 MV/m. For a critical bias condition, width-normalized drain current has the dependency on channel width, resulting from the increased field effect mobility from 0.722 cm²/V-sec to 1.6 cm²/V-sec at V_GS=12 V due to the dissipated power at the drain edge and the NPN bipolar action.

Original language	English
Pages (from-to)	268-271
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	38
Issue number	1
DOIs	https://doi.org/10.1889/1.2785281
Publication status	Published - 2007
Event	2007 SID International Symposium - Long Beach, CA, United States Duration: 23 May 2007 → 25 May 2007

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@article{9e94a2d5637545e88384b2b88cc971dc,

title = "Anomalous increased drain current characteristics of a-Si:H TFTs with long channel width",

abstract = "A-Si: H TFTs having channel widths ranging from 40 μm to 48,000 μm were successfully fabricated and investigated for characterization of electrical dependence on channel width. TFTs with a critical channel width larger than 10,000 μm show width-normalized drain current increases significantly even at the low lateral electrical field of 1.9 MV/m. For a critical bias condition, width-normalized drain current has the dependency on channel width, resulting from the increased field effect mobility from 0.722 cm2/V-sec to 1.6 cm2/V-sec at VGS=12 V due to the dissipated power at the drain edge and the NPN bipolar action.",

author = "Jin, \{Sung Hun\} and Park, \{Mun Soo\} and Kim, \{Jeong Il\} and Kim, \{Dong Gyu\} and Kim, \{Nam Deog\}",

year = "2007",

doi = "10.1889/1.2785281",

language = "English",

volume = "38",

pages = "268--271",

journal = "Digest of Technical Papers - SID International Symposium",

issn = "0097-966X",

publisher = "John Wiley and Sons Inc.",

number = "1",

note = "2007 SID International Symposium ; Conference date: 23-05-2007 Through 25-05-2007",

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TY - JOUR

T1 - Anomalous increased drain current characteristics of a-Si:H TFTs with long channel width

AU - Jin, Sung Hun

AU - Park, Mun Soo

AU - Kim, Jeong Il

AU - Kim, Dong Gyu

AU - Kim, Nam Deog

PY - 2007

Y1 - 2007

N2 - A-Si: H TFTs having channel widths ranging from 40 μm to 48,000 μm were successfully fabricated and investigated for characterization of electrical dependence on channel width. TFTs with a critical channel width larger than 10,000 μm show width-normalized drain current increases significantly even at the low lateral electrical field of 1.9 MV/m. For a critical bias condition, width-normalized drain current has the dependency on channel width, resulting from the increased field effect mobility from 0.722 cm2/V-sec to 1.6 cm2/V-sec at VGS=12 V due to the dissipated power at the drain edge and the NPN bipolar action.

AB - A-Si: H TFTs having channel widths ranging from 40 μm to 48,000 μm were successfully fabricated and investigated for characterization of electrical dependence on channel width. TFTs with a critical channel width larger than 10,000 μm show width-normalized drain current increases significantly even at the low lateral electrical field of 1.9 MV/m. For a critical bias condition, width-normalized drain current has the dependency on channel width, resulting from the increased field effect mobility from 0.722 cm2/V-sec to 1.6 cm2/V-sec at VGS=12 V due to the dissipated power at the drain edge and the NPN bipolar action.

UR - https://www.scopus.com/pages/publications/34547918864

U2 - 10.1889/1.2785281

DO - 10.1889/1.2785281

M3 - Conference article

AN - SCOPUS:34547918864

SN - 0097-966X

VL - 38

SP - 268

EP - 271

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 1

T2 - 2007 SID International Symposium

Y2 - 23 May 2007 through 25 May 2007

ER -

Anomalous increased drain current characteristics of a-Si:H TFTs with long channel width

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