Anomalous light-induced enhancement of photoluminescence from Si nanocrystals fabricated by thermal oxidation of amorphous Si

Min Choul Kim; Sung Kim; Suk Ho Choi; Sangjin Park

doi:10.1063/1.2756110

Anomalous light-induced enhancement of photoluminescence from Si nanocrystals fabricated by thermal oxidation of amorphous Si

Min Choul Kim, Sung Kim, Suk Ho Choi, Sangjin Park

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8 Citations (Scopus)

Abstract

A band of ∼1.6 nm diameter Si nanocrystals (NCs) has been prepared at a depth of about 5 nm within Si O2 by atomic-layer deposition of 2 nm amorphous Si on 5 nm Si O2 and subsequent thermal oxidation at 900 °C. After 4 h light exposure of 5.66 W cm2, photoluminescence (PL) spectrum of the Si NCs is almost 60 times enhanced with its peak blueshifted by about 30 nm. The enhancement rate of the PL intensity with illumination time increases as the oxidation time increases. The PL intensity and its peak wavelength are partially recovered by annealing the samples at 440 K for 1 h, suggesting the effect is metastable. It is proposed that the anomalous light-induced effect is originated from the defect states at the Si NCsSi O2 interfaces.

Original language	English
Article number	033111
Journal	Applied Physics Letters
Volume	91
Issue number	3
DOIs	https://doi.org/10.1063/1.2756110
Publication status	Published - 2007

Bibliographical note

Funding Information:
This work was supported by the National Research Program for the 0.1 Terabit Non-Volatile Memory Development sponsored by the Korean Ministry of Science and Technology. HRTEM and SRPES measurements were performed using the high-voltage electron microscope (JEM-ARM1300S, Jeol, Japan) installed at Korea Basic Science Institute and the 7B1 beamline of Pohang Accelerator Laboratory at Pohang, Korea, respectively.

Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.

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title = "Anomalous light-induced enhancement of photoluminescence from Si nanocrystals fabricated by thermal oxidation of amorphous Si",

abstract = "A band of ∼1.6 nm diameter Si nanocrystals (NCs) has been prepared at a depth of about 5 nm within Si O2 by atomic-layer deposition of 2 nm amorphous Si on 5 nm Si O2 and subsequent thermal oxidation at 900 °C. After 4 h light exposure of 5.66 W cm2, photoluminescence (PL) spectrum of the Si NCs is almost 60 times enhanced with its peak blueshifted by about 30 nm. The enhancement rate of the PL intensity with illumination time increases as the oxidation time increases. The PL intensity and its peak wavelength are partially recovered by annealing the samples at 440 K for 1 h, suggesting the effect is metastable. It is proposed that the anomalous light-induced effect is originated from the defect states at the Si NCsSi O2 interfaces.",

author = "Kim, {Min Choul} and Sung Kim and Choi, {Suk Ho} and Sangjin Park",

note = "Funding Information: This work was supported by the National Research Program for the 0.1 Terabit Non-Volatile Memory Development sponsored by the Korean Ministry of Science and Technology. HRTEM and SRPES measurements were performed using the high-voltage electron microscope (JEM-ARM1300S, Jeol, Japan) installed at Korea Basic Science Institute and the 7B1 beamline of Pohang Accelerator Laboratory at Pohang, Korea, respectively. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

year = "2007",

doi = "10.1063/1.2756110",

language = "English",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Anomalous light-induced enhancement of photoluminescence from Si nanocrystals fabricated by thermal oxidation of amorphous Si

AU - Kim, Min Choul

AU - Kim, Sung

AU - Choi, Suk Ho

AU - Park, Sangjin

N1 - Funding Information: This work was supported by the National Research Program for the 0.1 Terabit Non-Volatile Memory Development sponsored by the Korean Ministry of Science and Technology. HRTEM and SRPES measurements were performed using the high-voltage electron microscope (JEM-ARM1300S, Jeol, Japan) installed at Korea Basic Science Institute and the 7B1 beamline of Pohang Accelerator Laboratory at Pohang, Korea, respectively. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2007

Y1 - 2007

N2 - A band of ∼1.6 nm diameter Si nanocrystals (NCs) has been prepared at a depth of about 5 nm within Si O2 by atomic-layer deposition of 2 nm amorphous Si on 5 nm Si O2 and subsequent thermal oxidation at 900 °C. After 4 h light exposure of 5.66 W cm2, photoluminescence (PL) spectrum of the Si NCs is almost 60 times enhanced with its peak blueshifted by about 30 nm. The enhancement rate of the PL intensity with illumination time increases as the oxidation time increases. The PL intensity and its peak wavelength are partially recovered by annealing the samples at 440 K for 1 h, suggesting the effect is metastable. It is proposed that the anomalous light-induced effect is originated from the defect states at the Si NCsSi O2 interfaces.

AB - A band of ∼1.6 nm diameter Si nanocrystals (NCs) has been prepared at a depth of about 5 nm within Si O2 by atomic-layer deposition of 2 nm amorphous Si on 5 nm Si O2 and subsequent thermal oxidation at 900 °C. After 4 h light exposure of 5.66 W cm2, photoluminescence (PL) spectrum of the Si NCs is almost 60 times enhanced with its peak blueshifted by about 30 nm. The enhancement rate of the PL intensity with illumination time increases as the oxidation time increases. The PL intensity and its peak wavelength are partially recovered by annealing the samples at 440 K for 1 h, suggesting the effect is metastable. It is proposed that the anomalous light-induced effect is originated from the defect states at the Si NCsSi O2 interfaces.

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U2 - 10.1063/1.2756110

DO - 10.1063/1.2756110

M3 - Article

AN - SCOPUS:34547205511

SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 033111

ER -

Anomalous light-induced enhancement of photoluminescence from Si nanocrystals fabricated by thermal oxidation of amorphous Si

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