Arbitrary surface structuring of amorphous silicon films based on femtosecond-laser-induced crystallization

Geon Joon Lee; Seok Ho Song; Young Pak Lee; Hyeonsik Cheong; Chong Seung Yoon; Yong Duck Son; Jin Jang

doi:10.1063/1.2358922

Arbitrary surface structuring of amorphous silicon films based on femtosecond-laser-induced crystallization

Geon Joon Lee
, Seok Ho Song
, Young Pak Lee
, Hyeonsik Cheong
, Chong Seung Yoon
, Yong Duck Son
, Jin Jang

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

The arbitrary surface structuring of amorphous silicon (a-Si) films was performed by applying the Fourier-transform (FT) method to the femtosecond-laser-induced crystallization. In order to realize the arbitrary structuring, the logo q-Psi was produced in the a-Si film by the FT of a computer-generated hologram. The crystallization of a-Si was performed using the near-infrared femtosecond-laser pulses. By micro-Raman spectroscopy, scanning-electron microscopy, and transmission-electron microscopy, it was found that the femtosecond-laser pulses induced a localized phase transformation from the amorphous to the crystalline phase, and the spatially selected crystallization of the a-Si was responsible for the formation of the two-dimensional pattern.

Original language	English
Article number	151907
Journal	Applied Physics Letters
Volume	89
Issue number	15
DOIs	https://doi.org/10.1063/1.2358922
Publication status	Published - 2006

Bibliographical note

Funding Information:
This work was supported by the Korea Science and Engineering Foundation (KOSEF) through Quantum Photonic Science Research Center.

Copyright:
Copyright 2009 Elsevier B.V., All rights reserved.

Access to Document

10.1063/1.2358922

Cite this

@article{3742c3d1fbb44b42becb591703775cc7,

title = "Arbitrary surface structuring of amorphous silicon films based on femtosecond-laser-induced crystallization",

abstract = "The arbitrary surface structuring of amorphous silicon (a-Si) films was performed by applying the Fourier-transform (FT) method to the femtosecond-laser-induced crystallization. In order to realize the arbitrary structuring, the logo q-Psi was produced in the a-Si film by the FT of a computer-generated hologram. The crystallization of a-Si was performed using the near-infrared femtosecond-laser pulses. By micro-Raman spectroscopy, scanning-electron microscopy, and transmission-electron microscopy, it was found that the femtosecond-laser pulses induced a localized phase transformation from the amorphous to the crystalline phase, and the spatially selected crystallization of the a-Si was responsible for the formation of the two-dimensional pattern.",

author = "Lee, \{Geon Joon\} and Song, \{Seok Ho\} and Lee, \{Young Pak\} and Hyeonsik Cheong and Yoon, \{Chong Seung\} and Son, \{Yong Duck\} and Jin Jang",

note = "Funding Information: This work was supported by the Korea Science and Engineering Foundation (KOSEF) through Quantum Photonic Science Research Center. Copyright: Copyright 2009 Elsevier B.V., All rights reserved.",

year = "2006",

doi = "10.1063/1.2358922",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "15",

}

TY - JOUR

T1 - Arbitrary surface structuring of amorphous silicon films based on femtosecond-laser-induced crystallization

AU - Lee, Geon Joon

AU - Song, Seok Ho

AU - Lee, Young Pak

AU - Cheong, Hyeonsik

AU - Yoon, Chong Seung

AU - Son, Yong Duck

AU - Jang, Jin

N1 - Funding Information: This work was supported by the Korea Science and Engineering Foundation (KOSEF) through Quantum Photonic Science Research Center. Copyright: Copyright 2009 Elsevier B.V., All rights reserved.

PY - 2006

Y1 - 2006

N2 - The arbitrary surface structuring of amorphous silicon (a-Si) films was performed by applying the Fourier-transform (FT) method to the femtosecond-laser-induced crystallization. In order to realize the arbitrary structuring, the logo q-Psi was produced in the a-Si film by the FT of a computer-generated hologram. The crystallization of a-Si was performed using the near-infrared femtosecond-laser pulses. By micro-Raman spectroscopy, scanning-electron microscopy, and transmission-electron microscopy, it was found that the femtosecond-laser pulses induced a localized phase transformation from the amorphous to the crystalline phase, and the spatially selected crystallization of the a-Si was responsible for the formation of the two-dimensional pattern.

AB - The arbitrary surface structuring of amorphous silicon (a-Si) films was performed by applying the Fourier-transform (FT) method to the femtosecond-laser-induced crystallization. In order to realize the arbitrary structuring, the logo q-Psi was produced in the a-Si film by the FT of a computer-generated hologram. The crystallization of a-Si was performed using the near-infrared femtosecond-laser pulses. By micro-Raman spectroscopy, scanning-electron microscopy, and transmission-electron microscopy, it was found that the femtosecond-laser pulses induced a localized phase transformation from the amorphous to the crystalline phase, and the spatially selected crystallization of the a-Si was responsible for the formation of the two-dimensional pattern.

UR - https://www.scopus.com/pages/publications/33750006293

U2 - 10.1063/1.2358922

DO - 10.1063/1.2358922

M3 - Article

AN - SCOPUS:33750006293

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 151907

ER -

Arbitrary surface structuring of amorphous silicon films based on femtosecond-laser-induced crystallization

Abstract

Bibliographical note

Access to Document

Other files and links

Fingerprint

Cite this