Brain-like synapse thin-film transistors using oxide semiconductor channel and solid electrolytic gate insulator

S. M. Yoon; E. J. Kim; Y. M. Kim; J. Y. Oh

doi:10.1149/07901.0183ecst

Brain-like synapse thin-film transistors using oxide semiconductor channel and solid electrolytic gate insulator

S. M. Yoon
, E. J. Kim
, Y. M. Kim
, J. Y. Oh

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We proposed a synapse thin film transistors with a top-gate structure composed of an In-Ga-Zn-O (IGZO) active channel and a Li-incorporated polypropylene carbonate (Li:PPC) gate insulator. The physical and electrical properties of the PPC were investigated for the use as an electrolytic gate insulator of the synapse TFTs. Synaptic behaviors including the paired-pulse facilitation (PPF) operations were successfully confirmed in the fabricated synapse TFTs, in which output drain currents were effectively modulated with various input pulse conditions owing to the electrostatic coupling between the carriers in IGZO channel and lithium ions in PPC.

Original language	English
Title of host publication	ECS Transactions
Editors	Y. Kuo
Publisher	Electrochemical Society Inc.
Pages	183-188
Number of pages	6
Edition	1
ISBN (Electronic)	9781607688167
DOIs	https://doi.org/10.1149/07901.0183ecst
Publication status	Published - 2017
Event	6th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs TFT 2017 - Hernstein, Austria Duration: 21 May 2017 → 25 May 2017

Publication series

Name	ECS Transactions
Number	1
Volume	79
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	6th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs TFT 2017
Country/Territory	Austria
City	Hernstein
Period	21/05/17 → 25/05/17

Bibliographical note

Publisher Copyright:
© The Electrochemical Society.

Access to Document

10.1149/07901.0183ecst

Cite this

@inproceedings{455920df768b4fe1bfbd306b4973e01f,

title = "Brain-like synapse thin-film transistors using oxide semiconductor channel and solid electrolytic gate insulator",

abstract = "We proposed a synapse thin film transistors with a top-gate structure composed of an In-Ga-Zn-O (IGZO) active channel and a Li-incorporated polypropylene carbonate (Li:PPC) gate insulator. The physical and electrical properties of the PPC were investigated for the use as an electrolytic gate insulator of the synapse TFTs. Synaptic behaviors including the paired-pulse facilitation (PPF) operations were successfully confirmed in the fabricated synapse TFTs, in which output drain currents were effectively modulated with various input pulse conditions owing to the electrostatic coupling between the carriers in IGZO channel and lithium ions in PPC.",

author = "Yoon, \{S. M.\} and Kim, \{E. J.\} and Kim, \{Y. M.\} and Oh, \{J. Y.\}",

note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; 6th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs TFT 2017 ; Conference date: 21-05-2017 Through 25-05-2017",

year = "2017",

doi = "10.1149/07901.0183ecst",

language = "English",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "1",

pages = "183--188",

editor = "Y. Kuo",

booktitle = "ECS Transactions",

edition = "1",

}

Yoon, SM, Kim, EJ, Kim, YM & Oh, JY 2017, Brain-like synapse thin-film transistors using oxide semiconductor channel and solid electrolytic gate insulator. in Y Kuo (ed.), ECS Transactions. 1 edn, ECS Transactions, no. 1, vol. 79, Electrochemical Society Inc., pp. 183-188, 6th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs TFT 2017, Hernstein, Austria, 21/05/17. https://doi.org/10.1149/07901.0183ecst

Brain-like synapse thin-film transistors using oxide semiconductor channel and solid electrolytic gate insulator. / Yoon, S. M.; Kim, E. J.; Kim, Y. M. et al.
ECS Transactions. ed. / Y. Kuo. 1. ed. Electrochemical Society Inc., 2017. p. 183-188 (ECS Transactions; Vol. 79, No. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Brain-like synapse thin-film transistors using oxide semiconductor channel and solid electrolytic gate insulator

AU - Yoon, S. M.

AU - Kim, E. J.

AU - Kim, Y. M.

AU - Oh, J. Y.

PY - 2017

Y1 - 2017

N2 - We proposed a synapse thin film transistors with a top-gate structure composed of an In-Ga-Zn-O (IGZO) active channel and a Li-incorporated polypropylene carbonate (Li:PPC) gate insulator. The physical and electrical properties of the PPC were investigated for the use as an electrolytic gate insulator of the synapse TFTs. Synaptic behaviors including the paired-pulse facilitation (PPF) operations were successfully confirmed in the fabricated synapse TFTs, in which output drain currents were effectively modulated with various input pulse conditions owing to the electrostatic coupling between the carriers in IGZO channel and lithium ions in PPC.

AB - We proposed a synapse thin film transistors with a top-gate structure composed of an In-Ga-Zn-O (IGZO) active channel and a Li-incorporated polypropylene carbonate (Li:PPC) gate insulator. The physical and electrical properties of the PPC were investigated for the use as an electrolytic gate insulator of the synapse TFTs. Synaptic behaviors including the paired-pulse facilitation (PPF) operations were successfully confirmed in the fabricated synapse TFTs, in which output drain currents were effectively modulated with various input pulse conditions owing to the electrostatic coupling between the carriers in IGZO channel and lithium ions in PPC.

UR - https://www.scopus.com/pages/publications/85020539596

U2 - 10.1149/07901.0183ecst

DO - 10.1149/07901.0183ecst

M3 - Conference contribution

AN - SCOPUS:85020539596

T3 - ECS Transactions

SP - 183

EP - 188

BT - ECS Transactions

A2 - Kuo, Y.

PB - Electrochemical Society Inc.

T2 - 6th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs TFT 2017

Y2 - 21 May 2017 through 25 May 2017

ER -

Brain-like synapse thin-film transistors using oxide semiconductor channel and solid electrolytic gate insulator

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