Brain-like synaptic operations of thin-film transistors using In-Ga-Zn-O active channel and PVP-SBA electrolytic gate insulator

Yeo Myeong Kim; Eom Ji Kim; Won Ho Lee; Ji Yeong Oh; Sung Min Yoon

doi:10.1109/AM-FPD.2016.7543603

Brain-like synaptic operations of thin-film transistors using In-Ga-Zn-O active channel and PVP-SBA electrolytic gate insulator

Yeo Myeong Kim
, Eom Ji Kim
, Won Ho Lee
, Ji Yeong Oh
, Sung Min Yoon

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We proposed a synapse thin film transistors with a bottom-gate structure composed of an In-Ga-Zn-O (IGZO) active channel and a poly 4(vinylphenol)-sodium beta-alumina (PVP-SBA) gate insulator. The physical and electrical properties of the PVP-SBA were demonstrated as an electrolytic gate insulator for the synapse TFTs. Paired-pulse facilitation (PPF), short-term memory (STM), and long-term memory (LTM) operations were successfully confirmed in the fabricated synapse TFTs, in which output drain currents were effectively modulated with various input pulse conditions owing to the electrostatic coupling between the carriers in IGZO channel and sodium ions in PVP-SBA in the STM operation and electrochemical doping in the LTM operation, respectively.

Original language	English
Title of host publication	Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publication	TFT Technologies and FPD Materials
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	15-18
Number of pages	4
ISBN (Electronic)	9784990875312
DOIs	https://doi.org/10.1109/AM-FPD.2016.7543603
Publication status	Published - 15 Aug 2016
Event	23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016 - Kyoto, Japan Duration: 6 Jul 2016 → 8 Jul 2016

Publication series

Name	Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

Conference

Conference	23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016
Country/Territory	Japan
City	Kyoto
Period	6/07/16 → 8/07/16

Bibliographical note

Publisher Copyright:
© 2016 FTFMD.

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10.1109/AM-FPD.2016.7543603

Cite this

Kim, Y. M., Kim, E. J., Lee, W. H., Oh, J. Y., & Yoon, S. M. (2016). Brain-like synaptic operations of thin-film transistors using In-Ga-Zn-O active channel and PVP-SBA electrolytic gate insulator. In Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials (pp. 15-18). Article 7543603 (Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/AM-FPD.2016.7543603

Kim, Yeo Myeong ; Kim, Eom Ji ; Lee, Won Ho et al. / Brain-like synaptic operations of thin-film transistors using In-Ga-Zn-O active channel and PVP-SBA electrolytic gate insulator. Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 15-18 (Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials).

@inproceedings{873f1acbef2b4037822bce4211269322,

title = "Brain-like synaptic operations of thin-film transistors using In-Ga-Zn-O active channel and PVP-SBA electrolytic gate insulator",

abstract = "We proposed a synapse thin film transistors with a bottom-gate structure composed of an In-Ga-Zn-O (IGZO) active channel and a poly 4(vinylphenol)-sodium beta-alumina (PVP-SBA) gate insulator. The physical and electrical properties of the PVP-SBA were demonstrated as an electrolytic gate insulator for the synapse TFTs. Paired-pulse facilitation (PPF), short-term memory (STM), and long-term memory (LTM) operations were successfully confirmed in the fabricated synapse TFTs, in which output drain currents were effectively modulated with various input pulse conditions owing to the electrostatic coupling between the carriers in IGZO channel and sodium ions in PVP-SBA in the STM operation and electrochemical doping in the LTM operation, respectively.",

author = "Kim, \{Yeo Myeong\} and Kim, \{Eom Ji\} and Lee, \{Won Ho\} and Oh, \{Ji Yeong\} and Yoon, \{Sung Min\}",

note = "Publisher Copyright: {\textcopyright} 2016 FTFMD.; 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016 ; Conference date: 06-07-2016 Through 08-07-2016",

year = "2016",

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day = "15",

doi = "10.1109/AM-FPD.2016.7543603",

language = "English",

series = "Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Kim, YM, Kim, EJ, Lee, WH, Oh, JY & Yoon, SM 2016, Brain-like synaptic operations of thin-film transistors using In-Ga-Zn-O active channel and PVP-SBA electrolytic gate insulator. in Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials., 7543603, Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Institute of Electrical and Electronics Engineers Inc., pp. 15-18, 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016, Kyoto, Japan, 6/07/16. https://doi.org/10.1109/AM-FPD.2016.7543603

Brain-like synaptic operations of thin-film transistors using In-Ga-Zn-O active channel and PVP-SBA electrolytic gate insulator. / Kim, Yeo Myeong; Kim, Eom Ji; Lee, Won Ho et al.
Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc., 2016. p. 15-18 7543603 (Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Brain-like synaptic operations of thin-film transistors using In-Ga-Zn-O active channel and PVP-SBA electrolytic gate insulator

AU - Kim, Yeo Myeong

AU - Kim, Eom Ji

AU - Lee, Won Ho

AU - Oh, Ji Yeong

AU - Yoon, Sung Min

PY - 2016/8/15

Y1 - 2016/8/15

N2 - We proposed a synapse thin film transistors with a bottom-gate structure composed of an In-Ga-Zn-O (IGZO) active channel and a poly 4(vinylphenol)-sodium beta-alumina (PVP-SBA) gate insulator. The physical and electrical properties of the PVP-SBA were demonstrated as an electrolytic gate insulator for the synapse TFTs. Paired-pulse facilitation (PPF), short-term memory (STM), and long-term memory (LTM) operations were successfully confirmed in the fabricated synapse TFTs, in which output drain currents were effectively modulated with various input pulse conditions owing to the electrostatic coupling between the carriers in IGZO channel and sodium ions in PVP-SBA in the STM operation and electrochemical doping in the LTM operation, respectively.

AB - We proposed a synapse thin film transistors with a bottom-gate structure composed of an In-Ga-Zn-O (IGZO) active channel and a poly 4(vinylphenol)-sodium beta-alumina (PVP-SBA) gate insulator. The physical and electrical properties of the PVP-SBA were demonstrated as an electrolytic gate insulator for the synapse TFTs. Paired-pulse facilitation (PPF), short-term memory (STM), and long-term memory (LTM) operations were successfully confirmed in the fabricated synapse TFTs, in which output drain currents were effectively modulated with various input pulse conditions owing to the electrostatic coupling between the carriers in IGZO channel and sodium ions in PVP-SBA in the STM operation and electrochemical doping in the LTM operation, respectively.

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T3 - Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

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BT - Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices

PB - Institute of Electrical and Electronics Engineers Inc.

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Kim YM, Kim EJ, Lee WH, Oh JY, Yoon SM. Brain-like synaptic operations of thin-film transistors using In-Ga-Zn-O active channel and PVP-SBA electrolytic gate insulator. In Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc. 2016. p. 15-18. 7543603. (Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials). doi: 10.1109/AM-FPD.2016.7543603

Brain-like synaptic operations of thin-film transistors using In-Ga-Zn-O active channel and PVP-SBA electrolytic gate insulator

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