Cathodoluminescence characteristics of large-scale in-rich InGaN grains and effect of low-energy electron-beam irradiation

Chinkyo Kim; Min Yang; Jaehyung Yi; Minhong Kim; Heesuk Song; Jina Jeon; Yoonho Choi; Tae Kyung Yoo; Shi Jong Leem

doi:10.3938/jkps.37.846

Cathodoluminescence characteristics of large-scale in-rich InGaN grains and effect of low-energy electron-beam irradiation

Chinkyo Kim, Min Yang, Jaehyung Yi, Minhong Kim, Heesuk Song, Jina Jeon, Yoonho Choi, Tae Kyung Yoo, Shi Jong Leem

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Abstract

GaN and InGaN single-layer and InGaN/GaN multi-quantum-well (MQW) structures were grown in sequence on sapphire (0001) substrates by using metalorganic chemical vapor deposition, and the luminescence characteristics of each layer were investigated employing room-temperature cathodoluminescence (CL). Large-scale In-rich grains several microns in width were observed in the monochromatic CL image, presumably formed at the InGaN MQW layer. The CL spectra measured at In-rich grains showed a slight red-shift and an enhanced peak intensity. The effect of low-energy electron-beam irradiation on the luminescence characteristics of each layer was investigated, and a monotonic decrease of the peak intensity was observed as a function of the irradiation dose. The reduction ratio of the normalized integrated intensity due to irradiation damage was found to be lower in In-rich InGaN than in GaN.

Original language	English
Pages (from-to)	846-849
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	37
Issue number	6
DOIs	https://doi.org/10.3938/jkps.37.846
Publication status	Published - Dec 2000

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@article{dd35811483f940e7852404fadfb08b23,

title = "Cathodoluminescence characteristics of large-scale in-rich InGaN grains and effect of low-energy electron-beam irradiation",

abstract = "GaN and InGaN single-layer and InGaN/GaN multi-quantum-well (MQW) structures were grown in sequence on sapphire (0001) substrates by using metalorganic chemical vapor deposition, and the luminescence characteristics of each layer were investigated employing room-temperature cathodoluminescence (CL). Large-scale In-rich grains several microns in width were observed in the monochromatic CL image, presumably formed at the InGaN MQW layer. The CL spectra measured at In-rich grains showed a slight red-shift and an enhanced peak intensity. The effect of low-energy electron-beam irradiation on the luminescence characteristics of each layer was investigated, and a monotonic decrease of the peak intensity was observed as a function of the irradiation dose. The reduction ratio of the normalized integrated intensity due to irradiation damage was found to be lower in In-rich InGaN than in GaN.",

author = "Chinkyo Kim and Min Yang and Jaehyung Yi and Minhong Kim and Heesuk Song and Jina Jeon and Yoonho Choi and Yoo, {Tae Kyung} and Leem, {Shi Jong}",

year = "2000",

month = dec,

doi = "10.3938/jkps.37.846",

language = "English",

volume = "37",

pages = "846--849",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "6",

}

TY - JOUR

T1 - Cathodoluminescence characteristics of large-scale in-rich InGaN grains and effect of low-energy electron-beam irradiation

AU - Kim, Chinkyo

AU - Yang, Min

AU - Yi, Jaehyung

AU - Kim, Minhong

AU - Song, Heesuk

AU - Jeon, Jina

AU - Choi, Yoonho

AU - Yoo, Tae Kyung

AU - Leem, Shi Jong

PY - 2000/12

Y1 - 2000/12

N2 - GaN and InGaN single-layer and InGaN/GaN multi-quantum-well (MQW) structures were grown in sequence on sapphire (0001) substrates by using metalorganic chemical vapor deposition, and the luminescence characteristics of each layer were investigated employing room-temperature cathodoluminescence (CL). Large-scale In-rich grains several microns in width were observed in the monochromatic CL image, presumably formed at the InGaN MQW layer. The CL spectra measured at In-rich grains showed a slight red-shift and an enhanced peak intensity. The effect of low-energy electron-beam irradiation on the luminescence characteristics of each layer was investigated, and a monotonic decrease of the peak intensity was observed as a function of the irradiation dose. The reduction ratio of the normalized integrated intensity due to irradiation damage was found to be lower in In-rich InGaN than in GaN.

AB - GaN and InGaN single-layer and InGaN/GaN multi-quantum-well (MQW) structures were grown in sequence on sapphire (0001) substrates by using metalorganic chemical vapor deposition, and the luminescence characteristics of each layer were investigated employing room-temperature cathodoluminescence (CL). Large-scale In-rich grains several microns in width were observed in the monochromatic CL image, presumably formed at the InGaN MQW layer. The CL spectra measured at In-rich grains showed a slight red-shift and an enhanced peak intensity. The effect of low-energy electron-beam irradiation on the luminescence characteristics of each layer was investigated, and a monotonic decrease of the peak intensity was observed as a function of the irradiation dose. The reduction ratio of the normalized integrated intensity due to irradiation damage was found to be lower in In-rich InGaN than in GaN.

UR - http://www.scopus.com/inward/record.url?scp=0034347664&partnerID=8YFLogxK

U2 - 10.3938/jkps.37.846

DO - 10.3938/jkps.37.846

M3 - Article

AN - SCOPUS:0034347664

SN - 0374-4884

VL - 37

SP - 846

EP - 849

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 6

ER -

Cathodoluminescence characteristics of large-scale in-rich InGaN grains and effect of low-energy electron-beam irradiation

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