Cathodoluminescence properties of silicon thin films crystallized by electron beam exposure

Seon Yong Park; Su Woong Lee; Jung Soo Kang; Ha Rim Lee; Mi Yeon Joo; Jin Kyo Kim; Kyu Chang Park

doi:10.1109/IVNC.2013.6624766

Cathodoluminescence properties of silicon thin films crystallized by electron beam exposure

Seon Yong Park, Su Woong Lee, Jung Soo Kang, Ha Rim Lee, Mi Yeon Joo, Jin Kyo Kim, Kyu Chang Park

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

In this study, we investigated cathodoluminescence properties from silicon thin film after electron beam exposure on amorphous silicon film. The emission spectrum shows broad distribution in the visible region. Raman spectroscopy and SEM measurement shows that the area exposed by E-beam is crystallized. However the intensities of CL spectra of a-Si weakly appeared at 500 ∼ 800 nm. The origin of CL spectrum from the silicon film exposed by E-beam will be discussed.

Original language	English
Title of host publication	2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013
DOIs	https://doi.org/10.1109/IVNC.2013.6624766
Publication status	Published - 2013
Event	2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013 - Roanoke, VA, United States Duration: 8 Jul 2013 → 12 Jul 2013

Publication series

Name	2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013

Conference

Conference	2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013
Country/Territory	United States
City	Roanoke, VA
Period	8/07/13 → 12/07/13

Keywords

CL
E-beam
Raman
SEM
crystallization
silicon

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10.1109/IVNC.2013.6624766

Cite this

Park, S. Y., Lee, S. W., Kang, J. S., Lee, H. R., Joo, M. Y., Kim, J. K., & Park, K. C. (2013). Cathodoluminescence properties of silicon thin films crystallized by electron beam exposure. In 2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013 Article 6624766 (2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013). https://doi.org/10.1109/IVNC.2013.6624766

@inproceedings{ec23faacd9ec4542afa07f8ad717743a,

title = "Cathodoluminescence properties of silicon thin films crystallized by electron beam exposure",

abstract = "In this study, we investigated cathodoluminescence properties from silicon thin film after electron beam exposure on amorphous silicon film. The emission spectrum shows broad distribution in the visible region. Raman spectroscopy and SEM measurement shows that the area exposed by E-beam is crystallized. However the intensities of CL spectra of a-Si weakly appeared at 500 ∼ 800 nm. The origin of CL spectrum from the silicon film exposed by E-beam will be discussed.",

keywords = "CL, E-beam, Raman, SEM, crystallization, silicon",

author = "Park, {Seon Yong} and Lee, {Su Woong} and Kang, {Jung Soo} and Lee, {Ha Rim} and Joo, {Mi Yeon} and Kim, {Jin Kyo} and Park, {Kyu Chang}",

year = "2013",

doi = "10.1109/IVNC.2013.6624766",

language = "English",

isbn = "9781467359931",

series = "2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013",

booktitle = "2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013",

}

Park, SY, Lee, SW, Kang, JS, Lee, HR, Joo, MY, Kim, JK & Park, KC 2013, Cathodoluminescence properties of silicon thin films crystallized by electron beam exposure. in 2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013., 6624766, 2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013, 2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013, Roanoke, VA, United States, 8/07/13. https://doi.org/10.1109/IVNC.2013.6624766

Cathodoluminescence properties of silicon thin films crystallized by electron beam exposure. / Park, Seon Yong; Lee, Su Woong; Kang, Jung Soo et al.
2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013. 2013. 6624766 (2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Cathodoluminescence properties of silicon thin films crystallized by electron beam exposure

AU - Park, Seon Yong

AU - Lee, Su Woong

AU - Kang, Jung Soo

AU - Lee, Ha Rim

AU - Joo, Mi Yeon

AU - Kim, Jin Kyo

AU - Park, Kyu Chang

PY - 2013

Y1 - 2013

N2 - In this study, we investigated cathodoluminescence properties from silicon thin film after electron beam exposure on amorphous silicon film. The emission spectrum shows broad distribution in the visible region. Raman spectroscopy and SEM measurement shows that the area exposed by E-beam is crystallized. However the intensities of CL spectra of a-Si weakly appeared at 500 ∼ 800 nm. The origin of CL spectrum from the silicon film exposed by E-beam will be discussed.

AB - In this study, we investigated cathodoluminescence properties from silicon thin film after electron beam exposure on amorphous silicon film. The emission spectrum shows broad distribution in the visible region. Raman spectroscopy and SEM measurement shows that the area exposed by E-beam is crystallized. However the intensities of CL spectra of a-Si weakly appeared at 500 ∼ 800 nm. The origin of CL spectrum from the silicon film exposed by E-beam will be discussed.

KW - CL

KW - E-beam

KW - Raman

KW - SEM

KW - crystallization

KW - silicon

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U2 - 10.1109/IVNC.2013.6624766

DO - 10.1109/IVNC.2013.6624766

M3 - Conference contribution

AN - SCOPUS:84888996296

SN - 9781467359931

T3 - 2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013

BT - 2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013

T2 - 2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013

Y2 - 8 July 2013 through 12 July 2013

ER -

Cathodoluminescence properties of silicon thin films crystallized by electron beam exposure

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Keywords

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