Characteristics of a GaN thick film on Si(111) grown by hydride vapor phase epitaxy using an AlN buffer layer

H. J. Lee; S. W. Lee; C. Kim; J. O. Seo; M. W. Cho; S. J. Leem; S. U. Hong; K. H. Shim; J. Y. Kang

Characteristics of a GaN thick film on Si(111) grown by hydride vapor phase epitaxy using an AlN buffer layer

H. J. Lee, S. W. Lee, C. Kim, J. O. Seo, M. W. Cho, S. J. Leem, S. U. Hong, K. H. Shim, J. Y. Kang

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

A thick GaN layer was grown by hydride vapor phase epitaxy (HVPE) on Si(111) substrate with an AlN buffer layer. The optical and structural characteristics of the sample were investigated by low-temperature photoluminescence (LT PL) and transmission electron microscopy (TEM). A sharp donor bound exciton observed in LT PL spectra indicated that introduction of AlN buffer layer greatly enhanced the optical characteristics of GaN grown on Si substrate. In addition to the exciton feature, asymmetric broad emission above band gap was observed, which could be explained by a free-electron recombination band. A well-defined interface between AlN and GaN observed in the TEM image supported good structural characteristics of the GaN layer.

Original language	English
Pages (from-to)	S349-S351
Journal	Journal of the Korean Physical Society
Volume	42
Issue number	SPEC.
Publication status	Published - Feb 2003
Event	Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 - Cheju Island, Korea, Republic of Duration: 20 Aug 2002 → 23 Aug 2002

Keywords

AlN buffer
GaN
Hydride vapor phase epitaxy
Molecular beam epitaxy
Si

Cite this

@article{334a350ff30f4b3f962d6baa52e7242c,

title = "Characteristics of a GaN thick film on Si(111) grown by hydride vapor phase epitaxy using an AlN buffer layer",

abstract = "A thick GaN layer was grown by hydride vapor phase epitaxy (HVPE) on Si(111) substrate with an AlN buffer layer. The optical and structural characteristics of the sample were investigated by low-temperature photoluminescence (LT PL) and transmission electron microscopy (TEM). A sharp donor bound exciton observed in LT PL spectra indicated that introduction of AlN buffer layer greatly enhanced the optical characteristics of GaN grown on Si substrate. In addition to the exciton feature, asymmetric broad emission above band gap was observed, which could be explained by a free-electron recombination band. A well-defined interface between AlN and GaN observed in the TEM image supported good structural characteristics of the GaN layer.",

keywords = "AlN buffer, GaN, Hydride vapor phase epitaxy, Molecular beam epitaxy, Si",

author = "Lee, {H. J.} and Lee, {S. W.} and C. Kim and Seo, {J. O.} and Cho, {M. W.} and Leem, {S. J.} and Hong, {S. U.} and Shim, {K. H.} and Kang, {J. Y.}",

year = "2003",

month = feb,

language = "English",

volume = "42",

pages = "S349--S351",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "SPEC.",

note = "Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 ; Conference date: 20-08-2002 Through 23-08-2002",

}

TY - JOUR

T1 - Characteristics of a GaN thick film on Si(111) grown by hydride vapor phase epitaxy using an AlN buffer layer

AU - Lee, H. J.

AU - Lee, S. W.

AU - Kim, C.

AU - Seo, J. O.

AU - Cho, M. W.

AU - Leem, S. J.

AU - Hong, S. U.

AU - Shim, K. H.

AU - Kang, J. Y.

PY - 2003/2

Y1 - 2003/2

N2 - A thick GaN layer was grown by hydride vapor phase epitaxy (HVPE) on Si(111) substrate with an AlN buffer layer. The optical and structural characteristics of the sample were investigated by low-temperature photoluminescence (LT PL) and transmission electron microscopy (TEM). A sharp donor bound exciton observed in LT PL spectra indicated that introduction of AlN buffer layer greatly enhanced the optical characteristics of GaN grown on Si substrate. In addition to the exciton feature, asymmetric broad emission above band gap was observed, which could be explained by a free-electron recombination band. A well-defined interface between AlN and GaN observed in the TEM image supported good structural characteristics of the GaN layer.

AB - A thick GaN layer was grown by hydride vapor phase epitaxy (HVPE) on Si(111) substrate with an AlN buffer layer. The optical and structural characteristics of the sample were investigated by low-temperature photoluminescence (LT PL) and transmission electron microscopy (TEM). A sharp donor bound exciton observed in LT PL spectra indicated that introduction of AlN buffer layer greatly enhanced the optical characteristics of GaN grown on Si substrate. In addition to the exciton feature, asymmetric broad emission above band gap was observed, which could be explained by a free-electron recombination band. A well-defined interface between AlN and GaN observed in the TEM image supported good structural characteristics of the GaN layer.

KW - AlN buffer

KW - GaN

KW - Hydride vapor phase epitaxy

KW - Molecular beam epitaxy

KW - Si

UR - http://www.scopus.com/inward/record.url?scp=0037306810&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0037306810

SN - 0374-4884

VL - 42

SP - S349-S351

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - SPEC.

T2 - Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002

Y2 - 20 August 2002 through 23 August 2002

ER -

Characteristics of a GaN thick film on Si(111) grown by hydride vapor phase epitaxy using an AlN buffer layer

Abstract

Keywords

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