Characteristics of MoS₂ monolayer non-volatile memory field effect transistors affected by the ferroelectric properties of BiFeO₃ thin films with Pt and SrRuO₃ bottom electrodes grown on glass substrates

We investigated the characteristics of ferroelectric non-volatile random-access memory field effect transistors (MoS₂-BFO NVRAM FETs) consisting of monolayer MoS₂ channels, BiFeO₃ (BFO) gate layers, and Pt and SrRuO₃ bottom electrodes on glass substrates. As a result of the comparative experiments of the Pt and SrRuO₃ bottom electrodes, it was confirmed that the BFO gate layer using the SrRuO₃ bottom electrode showed a higher remanent polarization, faster switching time, and superior fatigue endurance than the BFO gate layer using the Pt bottom electrode. It is suggested that the good ferroelectric properties of the BFO gate dielectric layer on the SrRuO₃ bottom electrode is resulting from its (001)-oriented growth. The MoS₂ BFO NVRAM FET with a SrRuO₃ bottom electrode exhibited a wider memory window than the Pt bottom electrode because the SrRuO₃ bottom electrode had a higher remanent polarization of the BFO gate layer compared to the Pt bottom electrode.