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Colorimetric Vertically Stacked Sensor Array Enabled by Solution-Processed Oxide Semiconductors for Volatile Organic Compound Detection

  • Hyeyun Lee
  • , Woongryeol Maeng
  • , Hanhee Byun
  • , Bukyu Yang
  • , Dong Hyuk Park
  • , Sunkook Kim
  • , Healin Im

Research output: Contribution to journalArticlepeer-review

Abstract

This work demonstrates the synthesis of spin-on oxide semiconductors via an ultraviolet (UV)-assisted annealing process using metal–organic precursors with β-diketone ligands. This process promotes the decomposition and subsequent condensation while preserving a high density of hydrogen- and oxygen-related donor species. These donors effectively supply free electrons and fill shallow trap states near the conduction band minimum (CBM), resulting in enhanced carrier mobility and on-current. A peak field-effect mobility of 89 cm2/V·s, an on-current (Ion) of 26.42 μA, and an Ion/Ioff ratio of 108 were achieved in bottom-gated transistors using a SiO2 gate dielectric. Moreover, the high density of trap states near the CBM broadens the spectral detection range from UV to visible light, yielding a high responsivity of 8,900 A/W and a detectivity of 1.26 × 1014 Jones. Leveraging this broadband photoresponsivity, we further developed a vertically stacked sensor platform for the detection of volatile organic compounds (VOCs). These results highlight UV-assisted solution processing as a powerful strategy to realize high-performance oxide electronics and multifunctional sensor platforms.

Original languageEnglish
Pages (from-to)2159-2165
Number of pages7
JournalACS Applied Electronic Materials
Volume8
Issue number5
DOIs
Publication statusPublished - 10 Mar 2026

Bibliographical note

Publisher Copyright:
© 2026 American Chemical Society

Keywords

  • Förster resonance energy transfer
  • gas detection
  • low temperature process
  • oxide semiconductor
  • solution process
  • volatile organic compounds

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