Abstract
This work demonstrates the synthesis of spin-on oxide semiconductors via an ultraviolet (UV)-assisted annealing process using metal–organic precursors with β-diketone ligands. This process promotes the decomposition and subsequent condensation while preserving a high density of hydrogen- and oxygen-related donor species. These donors effectively supply free electrons and fill shallow trap states near the conduction band minimum (CBM), resulting in enhanced carrier mobility and on-current. A peak field-effect mobility of 89 cm2/V·s, an on-current (Ion) of 26.42 μA, and an Ion/Ioff ratio of 108 were achieved in bottom-gated transistors using a SiO2 gate dielectric. Moreover, the high density of trap states near the CBM broadens the spectral detection range from UV to visible light, yielding a high responsivity of 8,900 A/W and a detectivity of 1.26 × 1014 Jones. Leveraging this broadband photoresponsivity, we further developed a vertically stacked sensor platform for the detection of volatile organic compounds (VOCs). These results highlight UV-assisted solution processing as a powerful strategy to realize high-performance oxide electronics and multifunctional sensor platforms.
| Original language | English |
|---|---|
| Pages (from-to) | 2159-2165 |
| Number of pages | 7 |
| Journal | ACS Applied Electronic Materials |
| Volume | 8 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 10 Mar 2026 |
Bibliographical note
Publisher Copyright:© 2026 American Chemical Society
Keywords
- Förster resonance energy transfer
- gas detection
- low temperature process
- oxide semiconductor
- solution process
- volatile organic compounds
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