Abstract
A DRAM architecture capable of providing dual-port interface is presented. The architecture utilises a novel global bitline scheme to obtain a very wide data bandwidth not possible using traditional DRAM architectures. Furthermore, the area penalty is minimised by using a conventional one-transistor one-capacitor cell coupled with special sensing units that have 84.6 more transistor count. The architecture allows simultaneous read and write access using a conventional two-metal DRAM fabrication process.
| Original language | English |
|---|---|
| Pages (from-to) | 1017-1018 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 43 |
| Issue number | 19 |
| DOIs | |
| Publication status | Published - 2007 |
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