Comparing Variation-tolerance and SEU/TID-Resilience of Three SRAM Cells in 28nm FD-SOI Technology: 6T, Quatro, and we-Quatro

Le Dinh Trang Dang; Trinh Dinh Linh; Ngyuen Thanh Dat; Changhong Min; Jinsang Kim; Ik Joon Chang; Jin Woo Han

doi:10.1109/IRPS45951.2020.9128910

Comparing Variation-tolerance and SEU/TID-Resilience of Three SRAM Cells in 28nm FD-SOI Technology: 6T, Quatro, and we-Quatro

Le Dinh Trang Dang, Trinh Dinh Linh, Ngyuen Thanh Dat, Changhong Min, Jinsang Kim, Ik Joon Chang, Jin Woo Han

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

In our earlier study, we presented a variation-tolerant and radiation-resilient SRAM cell, namely we-Quatro. In this work, we fabricate 4KB macros of 6T SRAM, Quatro, and we-Quatro in a 28nm FD-SOI. Their read and write stabilities are compared through actual silicon measurements. In addition, we perform low energy neutron, mostly thermal, and gamma irradiation tests to evaluate their SEU and TID-resilience. The results validate the efficacy of our we-Quatro.

Original language	English
Title of host publication	2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728131993
DOIs	https://doi.org/10.1109/IRPS45951.2020.9128910
Publication status	Published - Apr 2020
Event	2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Virtual, Online, United States Duration: 28 Apr 2020 → 30 May 2020

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
Volume	2020-April
ISSN (Print)	1541-7026

Conference

Conference	2020 IEEE International Reliability Physics Symposium, IRPS 2020
Country/Territory	United States
City	Virtual, Online
Period	28/04/20 → 30/05/20

Bibliographical note

Publisher Copyright:
© 2020 IEEE.

Keywords

SRAM
fully depleted silicon-on-insulator
single-event upset
total ionizing dose
variation-tolerance

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10.1109/IRPS45951.2020.9128910

Cite this

Trang Dang, L. D., Dinh Linh, T., Dat, N. T., Min, C., Kim, J., Chang, I. J., & Han, J. W. (2020). Comparing Variation-tolerance and SEU/TID-Resilience of Three SRAM Cells in 28nm FD-SOI Technology: 6T, Quatro, and we-Quatro. In 2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings Article 9128910 (IEEE International Reliability Physics Symposium Proceedings; Vol. 2020-April). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS45951.2020.9128910

Trang Dang, Le Dinh ; Dinh Linh, Trinh ; Dat, Ngyuen Thanh et al. / Comparing Variation-tolerance and SEU/TID-Resilience of Three SRAM Cells in 28nm FD-SOI Technology : 6T, Quatro, and we-Quatro. 2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2020. (IEEE International Reliability Physics Symposium Proceedings).

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title = "Comparing Variation-tolerance and SEU/TID-Resilience of Three SRAM Cells in 28nm FD-SOI Technology: 6T, Quatro, and we-Quatro",

abstract = "In our earlier study, we presented a variation-tolerant and radiation-resilient SRAM cell, namely we-Quatro. In this work, we fabricate 4KB macros of 6T SRAM, Quatro, and we-Quatro in a 28nm FD-SOI. Their read and write stabilities are compared through actual silicon measurements. In addition, we perform low energy neutron, mostly thermal, and gamma irradiation tests to evaluate their SEU and TID-resilience. The results validate the efficacy of our we-Quatro.",

keywords = "SRAM, fully depleted silicon-on-insulator, single-event upset, total ionizing dose, variation-tolerance",

author = "{Trang Dang}, {Le Dinh} and {Dinh Linh}, Trinh and Dat, {Ngyuen Thanh} and Changhong Min and Jinsang Kim and Chang, {Ik Joon} and Han, {Jin Woo}",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 2020 IEEE International Reliability Physics Symposium, IRPS 2020 ; Conference date: 28-04-2020 Through 30-05-2020",

year = "2020",

month = apr,

doi = "10.1109/IRPS45951.2020.9128910",

language = "English",

series = "IEEE International Reliability Physics Symposium Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Trang Dang, LD, Dinh Linh, T, Dat, NT, Min, C, Kim, J , Chang, IJ & Han, JW 2020, Comparing Variation-tolerance and SEU/TID-Resilience of Three SRAM Cells in 28nm FD-SOI Technology: 6T, Quatro, and we-Quatro. in 2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings., 9128910, IEEE International Reliability Physics Symposium Proceedings, vol. 2020-April, Institute of Electrical and Electronics Engineers Inc., 2020 IEEE International Reliability Physics Symposium, IRPS 2020, Virtual, Online, United States, 28/04/20. https://doi.org/10.1109/IRPS45951.2020.9128910

Comparing Variation-tolerance and SEU/TID-Resilience of Three SRAM Cells in 28nm FD-SOI Technology: 6T, Quatro, and we-Quatro. / Trang Dang, Le Dinh; Dinh Linh, Trinh; Dat, Ngyuen Thanh et al.
2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2020. 9128910 (IEEE International Reliability Physics Symposium Proceedings; Vol. 2020-April).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Trang Dang, Le Dinh

AU - Dinh Linh, Trinh

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AU - Chang, Ik Joon

AU - Han, Jin Woo

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N2 - In our earlier study, we presented a variation-tolerant and radiation-resilient SRAM cell, namely we-Quatro. In this work, we fabricate 4KB macros of 6T SRAM, Quatro, and we-Quatro in a 28nm FD-SOI. Their read and write stabilities are compared through actual silicon measurements. In addition, we perform low energy neutron, mostly thermal, and gamma irradiation tests to evaluate their SEU and TID-resilience. The results validate the efficacy of our we-Quatro.

AB - In our earlier study, we presented a variation-tolerant and radiation-resilient SRAM cell, namely we-Quatro. In this work, we fabricate 4KB macros of 6T SRAM, Quatro, and we-Quatro in a 28nm FD-SOI. Their read and write stabilities are compared through actual silicon measurements. In addition, we perform low energy neutron, mostly thermal, and gamma irradiation tests to evaluate their SEU and TID-resilience. The results validate the efficacy of our we-Quatro.

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KW - fully depleted silicon-on-insulator

KW - single-event upset

KW - total ionizing dose

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Trang Dang LD, Dinh Linh T, Dat NT, Min C, Kim J , Chang IJ et al. Comparing Variation-tolerance and SEU/TID-Resilience of Three SRAM Cells in 28nm FD-SOI Technology: 6T, Quatro, and we-Quatro. In 2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2020. 9128910. (IEEE International Reliability Physics Symposium Proceedings). doi: 10.1109/IRPS45951.2020.9128910

Comparing Variation-tolerance and SEU/TID-Resilience of Three SRAM Cells in 28nm FD-SOI Technology: 6T, Quatro, and we-Quatro

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