Comparison of electron emission properties of silicon coated carbon nanotubes in O2 atmosphere

Woo Mi Bae; Su Woong Lee; An Na Ha; Eun Hye Lee; Hee Chul Woo; Young Ju Eom; Jang Jin; Kyu Chang Park

Comparison of electron emission properties of silicon coated carbon nanotubes in O₂ atmosphere

Woo Mi Bae, Su Woong Lee, An Na Ha, Eun Hye Lee, Hee Chul Woo, Young Ju Eom, Jang Jin, Kyu Chang Park

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We studied the electron emission of silicon coated CNT with various O ₂ partial pressure. The electron emission currrent shows differen reduction rate with growth condition and gas pressure. However, a degradation rate of electron emission current of silicon coated CNTs show deareases compared with conventional CNTs. Enhanced life time with reduced degradation rate with silicon coated CNTs appear to silicon protection layer on CNTs.

Original language	English
Title of host publication	Proceedings - IVNC 2011
Subtitle of host publication	2011 24th International Vacuum Nanoelectronics Conference
Pages	131-132
Number of pages	2
Publication status	Published - 2011
Event	2011 24th International Vacuum Nanoelectronics Conference, IVNC 2011 - Wuppertal, Germany Duration: 18 Jul 2011 → 22 Jul 2011

Publication series

Name	Proceedings - IVNC 2011: 2011 24th International Vacuum Nanoelectronics Conference

Conference

Conference	2011 24th International Vacuum Nanoelectronics Conference, IVNC 2011
Country/Territory	Germany
City	Wuppertal
Period	18/07/11 → 22/07/11

Keywords

Carbon nanotube
Field emission
O ambient
RAP(resist-assisted patterning)

Cite this

Bae, W. M., Lee, S. W., Ha, A. N., Lee, E. H., Woo, H. C., Eom, Y. J., Jin, J., & Park, K. C. (2011). Comparison of electron emission properties of silicon coated carbon nanotubes in O₂ atmosphere. In Proceedings - IVNC 2011: 2011 24th International Vacuum Nanoelectronics Conference (pp. 131-132). Article 6004597 (Proceedings - IVNC 2011: 2011 24th International Vacuum Nanoelectronics Conference).

@inproceedings{7c0e63056c314ef68c69ed2beb5c97e4,

title = "Comparison of electron emission properties of silicon coated carbon nanotubes in O2 atmosphere",

abstract = "We studied the electron emission of silicon coated CNT with various O 2 partial pressure. The electron emission currrent shows differen reduction rate with growth condition and gas pressure. However, a degradation rate of electron emission current of silicon coated CNTs show deareases compared with conventional CNTs. Enhanced life time with reduced degradation rate with silicon coated CNTs appear to silicon protection layer on CNTs.",

keywords = "Carbon nanotube, Field emission, O ambient, RAP(resist-assisted patterning)",

author = "Bae, {Woo Mi} and Lee, {Su Woong} and Ha, {An Na} and Lee, {Eun Hye} and Woo, {Hee Chul} and Eom, {Young Ju} and Jang Jin and Park, {Kyu Chang}",

year = "2011",

language = "English",

isbn = "9783000350818",

series = "Proceedings - IVNC 2011: 2011 24th International Vacuum Nanoelectronics Conference",

pages = "131--132",

booktitle = "Proceedings - IVNC 2011",

}

Bae, WM, Lee, SW, Ha, AN, Lee, EH, Woo, HC, Eom, YJ, Jin, J & Park, KC 2011, Comparison of electron emission properties of silicon coated carbon nanotubes in O₂ atmosphere. in Proceedings - IVNC 2011: 2011 24th International Vacuum Nanoelectronics Conference., 6004597, Proceedings - IVNC 2011: 2011 24th International Vacuum Nanoelectronics Conference, pp. 131-132, 2011 24th International Vacuum Nanoelectronics Conference, IVNC 2011, Wuppertal, Germany, 18/07/11.

Comparison of electron emission properties of silicon coated carbon nanotubes in O₂ atmosphere. / Bae, Woo Mi; Lee, Su Woong; Ha, An Na et al.
Proceedings - IVNC 2011: 2011 24th International Vacuum Nanoelectronics Conference. 2011. p. 131-132 6004597 (Proceedings - IVNC 2011: 2011 24th International Vacuum Nanoelectronics Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Comparison of electron emission properties of silicon coated carbon nanotubes in O2 atmosphere

AU - Bae, Woo Mi

AU - Lee, Su Woong

AU - Ha, An Na

AU - Lee, Eun Hye

AU - Woo, Hee Chul

AU - Eom, Young Ju

AU - Jin, Jang

AU - Park, Kyu Chang

PY - 2011

Y1 - 2011

N2 - We studied the electron emission of silicon coated CNT with various O 2 partial pressure. The electron emission currrent shows differen reduction rate with growth condition and gas pressure. However, a degradation rate of electron emission current of silicon coated CNTs show deareases compared with conventional CNTs. Enhanced life time with reduced degradation rate with silicon coated CNTs appear to silicon protection layer on CNTs.

AB - We studied the electron emission of silicon coated CNT with various O 2 partial pressure. The electron emission currrent shows differen reduction rate with growth condition and gas pressure. However, a degradation rate of electron emission current of silicon coated CNTs show deareases compared with conventional CNTs. Enhanced life time with reduced degradation rate with silicon coated CNTs appear to silicon protection layer on CNTs.

KW - Carbon nanotube

KW - Field emission

KW - O ambient

KW - RAP(resist-assisted patterning)

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SN - 9783000350818

T3 - Proceedings - IVNC 2011: 2011 24th International Vacuum Nanoelectronics Conference

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BT - Proceedings - IVNC 2011

T2 - 2011 24th International Vacuum Nanoelectronics Conference, IVNC 2011

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