Compositional ratio effects on the device stability of IGZO TFTs

Shinhyuk Yang, Jun Yong Bak, Sung Min Yoon, Min Ki Ryu, Him Chan Oh, Chi Sun Hwang, Sang Hee Ko Park, Jin Jang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We fabricated transparent In-Ga-Zn-O TFTs with topgate structure on glass substrate. The IGZO semiconductors with various compositional ratios were used to compare that effect on bias stability and photon-induced negative bias instability. We found that deep level state in IGZO semiconductors highly affected by In/Ga ratio.

Original languageEnglish
Title of host publication31st International Display Research Conference 2011, EuroDisplay 2011
Pages206-208
Number of pages3
Publication statusPublished - 2011
Event31st International Display Research Conference 2011, EuroDisplay 2011 - Arcachon, France
Duration: 19 Sept 201122 Sept 2011

Publication series

NameSID Conference Record of the International Display Research Conference
ISSN (Print)1083-1312

Conference

Conference31st International Display Research Conference 2011, EuroDisplay 2011
Country/TerritoryFrance
CityArcachon
Period19/09/1122/09/11

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